FDMS8570S Fairchild Semiconductor, FDMS8570S Datasheet - Page 4

• Manufacturer Part Number: FDMS8570S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
Typical Characteristics
0.01
200
100
100
0.1
10
10
10
0.001
1
1
0.01
Figure 7.
8
6
4
2
0
0
Figure 9.
I
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
D
J
A
θ
Figure 11. Forward Bias Safe
= 28 A
JA
= MAX RATED
= 25
0.01
= 125
V
V
o
Switching Capability
10
DD
C
DS
Gate Charge Characteristics
t
0.1
o
AV
, DRAIN to SOURCE VOLTAGE (V)
= 10 V
C/W
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
DS(on)
Q
0.1
g
, GATE CHARGE (nC)
T
V
J
DD
20
= 125
= 15 V
1
1
o
C
T
J
V
= 25
T
DD
30
J
= 13 V
= 25 °C unless otherwise noted
o
10
C
T
J
= 100
10
40
100
o
C
100 ms
10 s
100 us
1 ms
10 ms
DC
1 s
1000
100
50
4
10000
10000
1000
1000
120
100
100
0.1
100
80
60
40
20
10
Figure 10. Maximum Continuous Drain
10
0
1
10
25
0.1
Figure 12.
-4
Figure 8.
Current vs Ambient Temperature
f = 1 MHz
V
GS
10
Limited by Package
= 0 V
R
-3
θ
V
JC
50
V
GS
Power Dissipation
DS
to Source Voltage
= 2.6
T
= 4.5 V
, DRAIN TO SOURCE VOLTAGE (V)
10
Capacitance vs Drain
C
Single Pulse Maximum
, C
-2
o
t, PULSE WIDTH (s)
C/W
ASE TEMPERATURE
75
10
1
-1
10
V
GS
100
0
= 10 V
SINGLE PULSE
R
T
A
θ
JA
= 25
10
(
= 125
o
1
C
)
o
125
C
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10
o
100
C/W
C
C
C
iss
oss
rss
1000
150
30