FDMS8570S Fairchild Semiconductor, FDMS8570S Datasheet - Page 6

• Manufacturer Part Number: FDMS8570S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
Typical Characteristics
SyncFET
Characteristics
Fairchild’s SyncFET
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8570S.
diode reverse recovery characteristic
30
25
20
15
10
-5
Figure 14. FDMS8570S SyncFET
5
0
0
TM
Schottky body diode
50
TM
process embeds a Schottky diode in
100
TIME (ns)
di/dt = 300 A/
(continued)
150
TM
200
μ
s
body
250
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
Figure 15. SyncFET
leakage versus drain-source voltage
-2
-3
-4
-5
-6
0
5
V
DS
, REVERSE VOLTAGE (V)
10
TM
T
J
T
body diode reverse
T
= 100
J
J
= 25
= 125
15
o
o
C
C
o
C
20
www.fairchildsemi.com
25