FDPF4N60NZ

Manufacturer Part NumberFDPF4N60NZ
Description
ManufacturerFairchild Semiconductor
FDPF4N60NZ datasheet
 
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FDP4N60NZ / FDPF4N60NZ
N-Channel MOSFET
600V, 3.8A, 2.5Ω
Features
• R
= 1.9Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low Gate Charge ( Typ. 8.3nC)
• Low C
( Typ. 3.7pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
TO-220
G D S
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2011 Fairchild Semiconductor Corporation
FDP4N60NZ / FDPF4N60NZ Rev.C0
= 1.9A
D
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
December 2011
UniFET-II
D
D
G
G
S
S
FDP4N60NZ FDPF4N60NZ
600
±25
3.8
3.8*
2.3
2.3*
(Note 1)
15
15*
(Note 2)
223.8
(Note 1)
3.8
(Note 1)
8.9
(Note 3)
10
89
28
0.71
0.22
-55 to +150
300
FDP4N60NZ FDPF4N60NZ
1.4
4.5
0.5
62.5
62.5
www.fairchildsemi.com
TM
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF4N60NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ θCS R Thermal Resistance, Junction to Ambient θJA ©2011 Fairchild Semiconductor Corporation FDP4N60NZ / FDPF4N60NZ Rev.C0 = 1.9A D Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... G ≤ 3.8A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP4N60NZ / FDPF4N60NZ Rev.C0 Package Reel Size TO-220 TO-220F unless otherwise noted C Test Conditions I = 250μ ...

  • Page 3

    ... 1MHz ( C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FDP4N60NZ / FDPF4N60NZ Rev.C0 Figure 2. Transfer Characteristics 10 1 *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 40 ...

  • Page 4

    ... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Unclamped Inductive Switching Capability 125 0.01 0 TIME IN AVALANCHE (ms) AV FDP4N60NZ / FDPF4N60NZ Rev.C0 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 μ 250 A D 0.0 100 150 200 -100 Figure 10 ...

  • Page 5

    ... Typical Performance Characteristics 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP4N60NZ / FDPF4N60NZ Rev.C0 (Continued) Figure 12. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 4.5 C/W Max. θ Duty Factor (t) θ ...

  • Page 6

    ... FDP4N60NZ / FDPF4N60NZ Rev.C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP4N60NZ / FDPF4N60NZ Rev.C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • ...

  • Page 8

    ... Package Dimensions FDP4N60NZ / FDPF4N60NZ Rev.C0 TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP4N60NZ / FDPF4N60NZ Rev.C0 TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP4N60NZ / FDPF4N60NZ Rev.C0 ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...