FDMS86320 Fairchild Semiconductor, FDMS86320 Datasheet
FDMS86320
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FDMS86320 Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86320 FDMS86320 ©2011 Fairchild Semiconductor Corporation FDMS86320 Rev.C ® MOSFET General Description = 10 This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node = 8 ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 0.3 mH FDMS86320 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS86320 Rev °C unless otherwise noted 6 μ 100 125 150 ...
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... SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS86320 Rev °C unless otherwise noted J 3000 1000 100 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. FDMS86320 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...
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... Dimensional Outline and Pad Layout FDMS86320 Rev.C 6 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS86320 Rev.C ® tm ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...