FDMS86300 Fairchild Semiconductor, FDMS86300 Datasheet
FDMS86300
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FDMS86300 Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86300 FDMS86300 ©2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C ® MOSFET General Description = 19 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node = 15 ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 252 mJ is based on starting ©2011 Fairchild Semiconductor Corporation FDMS86300 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...
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... DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86300 Rev °C unless otherwise noted 5 μ 100 125 150 ...
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... R = 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86300 Rev °C unless otherwise noted J 10000 1000 150 o C 120 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86300 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C 6 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86300 Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...