FDMS8888 Fairchild Semiconductor, FDMS8888 Datasheet
FDMS8888
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FDMS8888 Summary of contents
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... R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device FDMS8888 8888 ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C NNNN ® MOSFET General Description = 13.5 A The FDMS8888 D conversion application. Advancements in both silicon = 10 package technologies have been combined to offer the lowest r while maintaining excellent switching performance ...
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... JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ° 3. Starting 0.3 mH ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev °C unless otherwise noted J Test Conditions I = 250 250 A, referenced to 25 °C ...
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... Figure 3. Normalized On Resistance vs Junction Temperature 80 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev °C unless otherwise noted J 4.0 3 2.5 2.0 1.5 1 0.5 2.0 2.5 3 ...
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... T = MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev °C unless otherwise noted J 2000 1000 100 100 ...
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... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 R 0.003 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C 6 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...