FDPF190N15A Fairchild Semiconductor, FDPF190N15A Datasheet - Page 3
FDPF190N15A
Manufacturer Part Number
FDPF190N15A
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDPF190N15A.pdf
(9 pages)
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FDPF190N15A Rev. A2
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
0.020
0.015
0.010
5000
1000
100
200
100
10
10
4
5
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
Drain Current and Gate Voltage
1. V
2. f = 1MHz
= 15.0V
GS
10.0V
V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
V
25
DS
= 0V
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
1
, Drain Current [A]
(
C ds = shorted
50
V
GS
V
GS
= 10V
= 20V
*Notes:
75
1. 250
2. T
)
10
*Note: T
C
= 25
μ
s Pulse Test
1
o
100
C
C
C
C
C
oss
= 25
iss
rss
100 200
o
C
125
2
3
200
100
200
100
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
1
1
8
6
4
2
0
0.0
2
0
*Notes:
1. V
2. 250
V
DS
SD
μ
= 10V
, Body Diode Forward Voltage [V]
s Pulse Test
Variation vs. Source Current
and Temperature
V
Q
3
GS
8
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
0.5
V
V
V
150
150
DS
DS
DS
o
o
= 30V
= 75V
= 120V
C
C
16
4
25
*Notes:
1. V
2. 250
*Note: I
-55
1.0
o
C
GS
o
25
C
μ
= 0V
s Pulse Test
24
5
o
C
D
= 27.4A
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