BSS138W Fairchild Semiconductor, BSS138W Datasheet - Page 3

• Manufacturer Part Number: BSS138W
• Description: These N-Channel enhancement mode field effect transistor
• Manufacturer: Fairchild Semiconductor

BSS138W Rev. A0
© 2010 Fairchild Semiconductor Corporation
Typical Performance Characteristics
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
2.0
1.6
1.2
0.8
0.4
0.0
0.0
-50
Figure 5. Drain-Source On Voltage with
0.0
Figure 3. On-Resistance Variation with
Figure 1. On-Region Characteristics.
V
V
I
D
GS
GS
= 220 mA
= 10V
= 10V
0.5
0.1
0
Temperature.
Temperature.
1.0
T
V
0.2
J
DS
. Junction Temperature (
. Drain-Source Voltage (V)
I
3.5V
D
. Drain Current (A)
1.5
0.3
50
4.5V
2.0
0.4
6V
100
o
C)
T
T
T
A
A
V
A
2.5
0.5
= 125(
= -55(
GS
= 25(
= 10V
2.5V
3V
2V
o
o
o
C)
C)
C)
3.0
0.6
150
3
Figure 6. Body Diode Forward Voltage Variation
1000
100
0.1
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0.0
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.0
0
with Source Current and Temperature.
V
V
GS
Drain Current and Gate Voltage.
GS
= 0 V
= 2.5V
V SD . Body Diode Forward Voltage [V]
T
0.2
A
=25
0.2
2
Gate-to-Source Voltage.
o
C
T
A
3V
=150
V
0.4
GS
I
D
T
. Drain-Source Current(A)
. Gate to Source Voltage(V)
A
o
0.4
C
= 25
4
3.5V
o
C
0.6
T
A
T
= 125
A
0.6
4V
=-55
6
0.8
o
C
o
6V
C
4.5V
0.8
I
8
D
1.0
10V
= 110 mA
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1.0
1.2
10