FDPF320N06L Fairchild Semiconductor, FDPF320N06L Datasheet

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FDPF320N06L

Manufacturer Part Number
FDPF320N06L
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2010 Fairchild Semiconductor Corporation
FDPF320N06L Rev. A4
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDPF320N06L
N-Channel
60V, 21A, 25mΩ
Features
• R
• R
• Low Gate Charge ( Typ. 23.2nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
D
θJC
θJA
, T
Symbol
Symbol
DS(on)
DS(on)
STG
rss
= 20mΩ ( Typ.)@ V
= 23mΩ ( Typ.)@ V
( Typ. 64pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
PowerTrench
G
GS
GS
C
= 10V, I
= 5V, I
E
D
D
= 17A
= 21A
T
TO-220F
(Retractable)
C
= 25
®
Parameter
Parameter
MOSFET
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted*
C
= 25
o
C)
1
C
C
= 25
= 100
o
Description
This
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC converters / Synchronous Rectification
C
o
C)
o
C)
N-Channel
G
(Note 1)
(Note 2)
(Note 3)
MOSFET
D
S
is
FDPF320N06L
FDPF320N06L
-55 to +175
produced
0.17
±20
300
62.5
6.0
60
21
15
84
66
26
5.8
December 2010
using
www.fairchildsemi.com
Fairchild
Units
W/
Units
o
V/ns
mJ
o
o
C/W
W
V
V
A
A
C
C
o
C

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FDPF320N06L Summary of contents

Page 1

... Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDPF320N06L Rev. A4 ® MOSFET Description = 21A This N-Channel D Semiconductor’s advance PowerTrench process that has been = 17A D especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... G J ≤ 21A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDPF320N06L Rev. A4 Package Reel Size TO-220F - unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... Figure 5. Capacitance Characteristics 4000 C iss = oss = rss = iss 1000 C oss C rss 100 40 0 Drain-Source Voltage [V] DS FDPF320N06L Rev. A4 Figure 2. Transfer Characteristics 100 10 *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 10 = 20V ...

Page 4

... Operation in This Area 1 is Limited by R DS(on) *Notes: 0 Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 0.2 1 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDPF320N06L Rev. A4 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 μ 250 A D 0.0 100 150 200 Figure 10. Maximum Drain Current μ ...

Page 5

... FDPF320N06L Rev. A4 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDPF320N06L Rev. A4 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 7

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDPF320N06L Rev. A4 TO-220F 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDPF320N06L Rev. A4 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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