BUZ11

Manufacturer Part NumberBUZ11
DescriptionThis is an N-Channel enhancement mode silicon gate powerfield effect transistor designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring
ManufacturerFairchild Semiconductor
BUZ11 datasheets

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Typical Performance Curves
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 25V
DS
15
10
5
0
0
1
2
3
4
V
, GATE TO SOURCE VOLTAGE (V)
GS
FIGURE 6. TRANSFER CHARACTERISTICS
0.08
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
= 15A, V
= 10V
D
GS
0.06
0.04
0.02
0
-50
0
50
T
, JUNCTION TEMPERATURE (
J
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
1
10
0
10
-1
10
V
= 0V, f = 1MHz
GS
C
= C
+ C
ISS
GS
GD
C
= C
RSS
GD
≈ C
C
+ C
OSS
DS
GD
-2
10
0
10
20
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
BUZ11
Unless Otherwise Specified (Continued)
0.15
0.10
0.05
5
6
7
8
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
4
3
2
1
0
100
150
o
C)
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
10
8
C
ISS
C
6
OSS
C
RSS
4
2
0
30
40
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 5V
GS
0
0
20
40
I
, DRAIN CURRENT (A)
D
VOLTAGE AND DRAIN CURRENT
-50
0
50
T
, JUNCTION TEMPERATURE (
J
TEMPERATURE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 25V
DS
o
T
= 25
C
J
0
5
10
I
, DRAIN CURRENT (A)
D
5.5V
6V
6.5V
7V
7.5V
8V
9V
10V
20V
60
V
= V
DS
GS
I
= 1mA
D
100
150
o
C)
15
20
BUZ1 Rev. A

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