BTS 7960B Infineon Technologies, BTS 7960B Datasheet
BTS 7960B
Specifications of BTS 7960B
Related parts for BTS 7960B
BTS 7960B Summary of contents
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Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Driver circuit with logic level inputs • Adjustable slew rates for optimized EMI Type BTS 7960B BTS 7960P Data Sheet undervoltage, Ordering Code Q67060-S6160 on request 2 BTS 7960B BTS 7960P BTS 7960B P-TO-263-7 BTS 7960P P-TO-220-7 Package P-TO-263-7 P-TO-220-7 Rev. 1.1, 2004-12-07 ...
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Overview The BTS 7960 is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All ...
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Terms Following figure shows the terms used in this data sheet Figure 2 Terms Data Sheet I ...
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... Pin Configuration 2.1 Pin Assignment BTS 7960B P-TO-263 Figure 3 Pin Assignment BTS 7960B and BTS 7960P (top view) 2.2 Pin Definitions and Functions Pin Symbol 1 GND INH 4,8 OUT Bold type: pin needs power wiring Data Sheet ...
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Maximum Ratings T -40 C < < 150 C (unless otherwise specified) j Pos Parameter Electrical Maximum Ratings 3.0.1 Supply voltage 3.0.2 Logic Input Voltage 3.0.3 HS/LS continuous drain current 3.0.4 HS pulsed drain current 3.0.5 LS pulsed drain ...
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Block Description and Characteristics 4.1 Supply Characteristics T – < < 150 < j Pos. Parameter General 4.1.1 Operating Voltage 4.1.2 Supply Current 4.1.3 Quiescent Current Data Sheet High Current PN Half Bridge Block ...
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Power Stages The power stages of the BTS 7960 consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located ...
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Power Stages - Static Characteristics T – < < 150 < j Pos. Parameter High Side Switch - Static Characteristics 4.2.1 On state high side resistance 4.2.2 Leakage current high side 4.2.3 Reverse diode ...
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Switching Times dr(HS) r(HS) V OUT 90% 10% Figure 5 Definition of switching times high side ( (LS) f (LS) V OUT 90% 10% Figure 6 Definition of switching times low side ...
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Power Stages - Dynamic Characteristics T V -40 C < < 150 Pos. Parameter HIgh Side Switch Dynamic Characteristics 4.2.7 Rise-time of HS 4.2.8 Slew rate HS on 4.2.9 Switch on delay ...
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T V -40 C < < 150 Pos. Parameter Low Side Switch Dynamic Characteristics 4.2.13 Rise-time of LS 4.2.14 Slew rate LS switch off 4.2.15 Switch off delay time LS 4.2.16 Fall-time of ...
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Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used ...
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IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. t After the switches return to their initial setting. The error signal at the IS pin is reset CLS t after 2 * ...
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High Side Switch -40° 25° 150° CLH Figure 9 Typical Current Limitation Detection Levels vs. Supply Voltage ...
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Electrical Characteristics - Protection Functions T – < < 150 < j Pos. Parameter Under Voltage Shut Down 4.3.1 Switch-ON voltage 4.3.2 Switch-OFF voltage 4.3.3 ON/OFF hysteresis Over Voltage Lock Out 4.3.4 Switch-ON voltage ...
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Control and Diagnostics 4.4.1 Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In ...
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Normal operation: current sense mode VS ESD- Load Sense output I logic IS(lim) Figure 10 Sense current and fault current Data Sheet High Current PN Half Bridge Block Description and Characteristics Fault condition: error flag mode ...
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Truth Table Device State Normal operation Over-voltage (OV) Under-voltage (UV) Overtemperature or short circuit of HSS or LSS Current limitation mode 1 Inputs: Switches 0 = Logic LOW OFF = switched off 1 = Logic HIGH ON = switched ...
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Electrical Characteristics - Control and Diagnostics T – < < 150 < j Pos. Parameter Control Inputs (IN and INH) 4.4.1 High level voltage INH, IN 4.4.2 Low level voltage INH, IN 4.4.3 Input ...
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Thermal Characteristics Pos Parameter 5.0.1 Thermal Resistance Junction-Case, Low Side Switch thjc(LS) j(LS) 5.0.2 Thermal Resistance Junction-Case, High Side Switch thjc(HS) j(HS) 5.0.3 Thermal Resistance Junction-Case, both Switches R T ...
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... INH Figure 11 Application Example: H-Bridge with two BTS 7960B 6.2 Layout Considerations Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances have to be minimized in the power bridge design necessary in all switched high power bridges. The BTS 7960 has no separate pin for power ground and logic ground ...
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Package Outlines P-TO-263-7 P-TO-263-7 (Plastic Transistor Single Outline Package) 0...0. 0 1.27 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal sufaces tin plated, except area of cut . ...
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Package Outlines P-TO-220-7 P-TO-220-7 (Plastic Transistor Single Outline Package) C 0...0. 0 1.27 0. Shear and punch direction no burrs this surface Back side, heatsink contour All m etal surfaces tin plated, except ...
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Revision History Revision Date n.a. 2004-03-18 0.9 2004-10-10 1.0 2004-11-30 1.1 2004-12-07 Data Sheet Changes / Comments Target Data Sheet Target Data Sheet converted to new layout Preliminary Data Sheet “Preliminary” removed; No other changes 25 High Current PN ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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... Published by Infineon Technologies AG ...