BTS 7751G Infineon Technologies, BTS 7751G Datasheet

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BTS 7751G

Manufacturer Part Number
BTS 7751G
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 7751G

Packages
P-DSO-28
Operating Range
4.8 - 42.0 V
Rds (on) (typ)
115.0 mOhm
Id(lim)
15.0 A
Iq (typ)
5.0 µA
Diagnosis
OT, OL Status Flag
TrilithIC
Data Sheet
1
1.1
• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low R
• Maximum peak current: typ. 14 A @ 25 °C=
• Very low quiescent current: typ. 5 µA @ 25 °C=
• Small outline, enhanced power P-DSO-package
• Full short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Open load detection in Off-mode
• Under-voltage detection with hysteresis
• PWM frequencies up to 1 kHz
Type
BTS 7751 G
1.2
The BTS 7751 G is part of the TrilithIC
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated lead frames. The sources are connected
to individual pins, so the BTS 7751 G can be used in H-bridge- as well as in any other
configuration. Both the double high-side and the two low-side switches of the
BTS 7751 G are manufactured in SMART SIPMOS
R
fully protected and contains the control and diagnosis circuitry. Also the low-side
switches are fully protected, the equivalent standard product is the BSP 78.
In contrast to the BTS 7750 G, the BTS 7751 G offers an open load in Off-mode
detection and slightly increased current limitation.
Data Sheet
DS ON
side switch (typical values @ 25 °C)
vertical DMOS power stages with CMOS control circuitry. The high-side switch is
Overview
Features
Description
DS ON
: 70 mΩ high-side switch, 45 mΩ low-
Ordering Code
Q67007-A9553
family containing three dies in one package:
1
®
technology which combines low
Package
P-DSO-28-14
P-DSO-28-14
BTS 7751 G
2003-03-06

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BTS 7751G Summary of contents

Page 1

TrilithIC Data Sheet 1 Overview 1.1 Features • Quad D-MOS switch driver • Free configurable as bridge or quad-switch • Optimized for DC motor management applications • Low mΩ high-side switch, 45 mΩ low side ...

Page 2

Pin Configuration (top view) DL1 1 IL1 2 DL1 3 N.C. 4 DHVS 5 GND 6 IH1 IH2 9 DHVS 10 N.C. 11 DL2 12 IL2 13 DL2 14 Figure 1 Data Sheet LS-Leadframe HS-Leadframe LS-Leadframe ...

Page 3

Pin Definitions and Functions Pin No. Symbol 1, 3, 25, 28 DL1 2 IL1 4 N.C. 5, 10, 19, 24 DHVS 6 GND 7 IH1 IH2 11 N.C. 12, 14, 15, 18 DL2 13 IL2 16,17 ...

Page 4

Functional Block Diagram IH1 9 IH2 6 GND 2 IL1 13 IL2 Figure 2 Block Diagram Data Sheet DHVS 5,10,19,24 Diagnosis Biasing and Protection Driver IN OUT ...

Page 5

Circuit Description Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs ...

Page 6

Open Load Detection Open load is detected by voltage measurement in Off state. If the output voltage exceeds a specified level the error flag is set with a delay. Status Flag The status flag output is an open drain output ...

Page 7

Electrical Characteristics 3.1 Absolute Maximum Ratings – 40 °C < T < 150 °C j Parameter High-Side-Switches (Pins DHVS, IH1,2 and SH1,2) Supply voltage Supply voltage for full short circuit protection HS-drain current* HS-input current HS-input voltage Note: * ...

Page 8

Absolute Maximum Ratings (cont’d) – 40 °C < T < 150 °C j Parameter Thermal Resistances (one HS-LS-Path active) LS-junction case HS-junction case Junction ambient /( j(HS) (HS) (LS) thja ESD Protection (Human Body ...

Page 9

Electrical Characteristics – 40 °C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Current Consumption HS-switch Quiescent current Supply current Leakage current of high-side switch Leakage current through ...

Page 10

Electrical Characteristics (cont’ – 40 °C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Output stages Inverse diode of high-side switch; Forward-voltage Inverse diode of low-side switch; Forward-voltage ...

Page 11

Electrical Characteristics (cont’ – 40 °C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis Status Flag ...

Page 12

Electrical Characteristics (cont’ – 40 °C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Switching times of low-side switch V Turn ON time to 10 ...

Page 13

IH1 IH1 7 V STL V STZ I IH1 IH2 9 V IH1 GND 6 V IH2 I GND I LKCL I IL1 IL1 IL2 IL2 13 ...

Page 14

R Q 100 kΩ Ω Ω Ω kΩ Ω Ω Ω IH1 IH2 GND µP IL1 IL2 GND In case of V <-0.6V or reverse battery the current into the µC might ...

Page 15

Package Outlines P-DSO-28-14 (Plastic Transistor Single Outline Package) 1.27 +0. 18.1 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max rer side 2) Does not include dambar protrusion of 0.05 max ...

Page 16

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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