BTS 3134D Infineon Technologies, BTS 3134D Datasheet

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BTS 3134D

Manufacturer Part Number
BTS 3134D
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 3134D

Packages
PG-TO252-3
Channels
1.0
Vds (max)
42.0 V
Id(nom)
3.5 A
Rds (on) (max)
50.0 mOhm
Id(lim) (min)
18.0 A
Datasheet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application



General Description
N channel vertical power FET in Smart SIPMOS
protection functions.
All kinds of resistive, inductive and capacitive loads in switching
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
or linear applications
Pin 1
In
HITFET
ESD
Gate-Driving
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Short circuit
Protection
1
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy

technology. Fully protected by embedded
Smart Low Side Power Switch
Source
Drain
Power HITFET BTS 3134D
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
P / PG-TO252-3-11
DS
AS
DS(on)
Rev. 1.3, 2006-12-22
3.5
42
50
3
M
V
m
A
J

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BTS 3134D Summary of contents

Page 1

... Drain source voltage On-state resistance Nominal load current Clamping energy  technology. Fully protected by embedded Current Overvoltage- Limitation Protection Over- Short circuit temperature Protection Protection 1 Smart Low Side Power Switch Power HITFET BTS 3134D DS(on) I 3.5 D(Nom PG-TO252-3- ...

Page 2

... Symbol (Human Body Model Smart Low Side Power Switch Power HITFET BTS 3134D Value DS(SC) no limit | -40 ...+150 j -55 ... +150 stg tot 43 1 ESD 1.5 thJC thJA ...

Page 3

... V DS(AZ -40 ... +150°C DSS V IN(th) I IN(on) R DS(on) R DS(on) I D(Nom °C, SMD I D(ISO °C, T < 150° >2.5 V) D(lim) = 200 µs 3 Smart Low Side Power Switch Power HITFET BTS 3134D Values Unit min. typ. max 1.5 10 µA V 1.3 1.7 2.2 0 µ ...

Page 4

... - IN(Prot) I IN(Prot Smart Low Side Power Switch Power HITFET BTS 3134D Values min. typ. max off - 0.3 / 0.7 /dt DS off 150 175 jt 80 160 - 130 ...

Page 5

... V IN Input circuit (ESD protection) Input Datasheet Inductive and overvoltage output clamp Short circuit behaviour V IN Gate Drive I IN Source/ I Ground Smart Low Side Power Switch Power HITFET BTS 3134D HITFET Rev. 1.3, 2006-12-22 ...

Page 6

... Rthjc = 1.5 K/W °C 75 100 150 Typ. input threshold voltage V IN(th) max. typ. 75 100 125 °C 175 Smart Low Side Power Switch Power HITFET BTS 3134D ); I =3A; V =f(T =10V 100 -50 - 100 125 °C ) ...

Page 7

... I D(lim) Parameter Typ. off-state drain current I = f(T DSS 11 µ Vin= Smart Low Side Power Switch Power HITFET BTS 3134D = f =12V -50 - 100 125 ° ...

Page 8

... Datasheet 10 Typ. transient thermal impedance Z =f(t thJA Parameter: D -40°C 25°C 85°C 150°C ms 0.4 0 Smart Low Side Power Switch Power HITFET BTS 3134D cooling area D=0.5 1 0.2 0.1 0.05 0 0.02 0. Single pulse - ...

Page 9

... You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet +0.15 6.5 -0.05 A 5.4 ±0.1 (5) 3x 0.75 ±0.1 2.28 0. Smart Low Side Power Switch Power HITFET BTS 3134D Package Outlines +0.05 2.3 -0.10 +0.08 B 0.5 -0.04 +0.20 0.9 -0.01 0...0.15 +0.08 0.5 -0.04 0.1 B All metal surfaces tin plated, except area of cut. ...

Page 10

... Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.0 2004-03-05 released production version Datasheet Smart Low Side Power Switch Power HITFET BTS 3134D 10 Revision History Rev. 1.3, 2006-12-22 ...

Page 11

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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