BTS 118D Infineon Technologies, BTS 118D Datasheet - Page 3

• Manufacturer Part Number: BTS 118D
• Manufacturer: Infineon Technologies

Specifications of BTS 118D

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 2.4 A
• Rds (on) (max): 100.0 mOhm
• Id(lim) (min): 10.0 A

1 @ 6 cm 2 cooling area
2 Device switched on into existing short circuit (see diagram Determination of I
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5 not subject to production test, calculated by R
Datasheet
Electrical Characteristics
Parameter
at T
Characteristics
Drain source clamp voltage
T
Off-state drain current
T
T
Input threshold voltage
I
I
On state input current
On-state resistance
V
V
On-state resistance
V
V
Nominal load current
T
Nominal load current
V
Current limit (active if V
V
D
D
j
j
j
j
IN
IN
IN
IN
IN
IN
= - 40 ...+ 150, I
= -40...+85 °C, V
= 150 °C
< 150°C, V
= 0.6 mA, T
= 0.6 mA, T
j
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
= 25°C, unless otherwise specified
D
D
D
D
= 2.2 A, T
= 2.2 A, T
DS
DS
IN
j
j
= 2.2 A, T
= 2.2 A, T
= 25 °C
= 150 °C
= 10 V, T
= 0.5 V, T
= 12 V, t
D
DS
= 10 mA
5)
5)
= 32 V , V
j
j
DS
= 25 °C
= 150 °C
j
j
A
m
= 25 °C
= 150 °C
>2.5 V)
C
= 85 °C, SMD
= 200 µs
= 85 °C, T
IN
2)
= 0 V
thJA and R ds(on)
j
< 150°C
1)
3
Symbol
V
I
V
I
R
R
I
I
I
DSS
IN(on)
D(Nom)
D(ISO)
D(lim)
DS(AZ)
IN(th)
DS(on)
DS(on)
Smart Low Side Power Switch
min.
1.3
0.8
2.4
3.5
42
10
D(lim) ). If the device is in on condit
-
-
-
-
-
-
-
Power HITFET BTS 118D
Values
160
130
typ.
1.5
1.7
3.2
90
70
10
15
4
5
-
-
Rev. 1.3, 2006-12-22
max.
120
240
100
200
2.2
55
12
30
20
8
-
-
-
Unit
V
µA
V
µA
mW
A