BTS 118D Infineon Technologies, BTS 118D Datasheet - Page 4

• Manufacturer Part Number: BTS 118D
• Manufacturer: Infineon Technologies

Specifications of BTS 118D

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 2.4 A
• Rds (on) (max): 100.0 mOhm
• Id(lim) (min): 10.0 A

Datasheet
1 Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 not subject to production test, specified by design
Electrical Characteristics
Parameter
at T
Inverse Diode
Inverse diode forward voltage
I
t
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Thermal hysteresis
Input current protection mode
T
Unclamped single pulse inductive energy
I
F
P
D
j
L
L
L
L
= 10.9 A, t
= 150 °C
= 300 µs
= 2.2 A, T
= 4.7 W, V
= 4.7 W, V
= 4.7 W, V
= 4.7 W, V
j
= 25°C, unless otherwise specified
j
m
IN
IN
IN
IN
= 25 °C, V
= 250 µs, V
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
V
V
70 to 50% V
50 to 70% V
IN
IN
2)
to 90% I
to 10% I
1)
bb
IN
= 12 V
= 0 V,
D
D
bb
bb
bb
bb
bb
bb
:
:
= 12 V
= 12 V
= 12 V
= 12 V
:
:
2)
4
V
Symbol
t
t
-dV
dV
T
DT
I
E
on
off
IN(Prot)
jt
SD
AS
DS
DS
jt
/dt
/dt
off
on
Smart Low Side Power Switch
min.
150
2
-
-
-
-
-
-
-
Power HITFET BTS 118D
Values
typ.
100
175
1.0
0.4
0.6
40
70
10
-
Rev. 1.3, 2006-12-22
max.
300
100
100
1.5
1.5
1.5
-
-
-
V
Unit
µs
V/µs
°C
K
µA
J