BTS 113A Infineon Technologies, BTS 113A Datasheet

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BTS 113A

Manufacturer Part Number
BTS 113A
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 113A

Packages
P-TO220-3
Channels
1.0
Vds (max)
60.0 V
Id(nom)
2.2 A
Rds (on) (max)
170.0 mOhm
Id(lim) (min)
-
Type
BTS 113A
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Continuous drain current,
ISO drain current
T
Pulsed drain current,
Short circuit current,
Short circuit dissipation,
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Features
C
= 85 ˚C,
N channel
Logic level
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
V
GS
= 10 V,
V
60 V
DS
R
GS
V
= 20 k
DS
T
T
T
T
C
j
j
C
= 0.5 V
= – 55 ... + 150 C
= – 55 ... + 150 C
= 25 C
= 25 C
I
11.5 A
D
R
0.17
DS(on)
1
Symbol
V
V
V
I
I
I
I
P
P
T
R
R
D
D-ISO
D puls
SC
j
DS
DGR
GS
SCmax
tot
th JC
th JA
,
T
stg
Package
TO-220AB
60
60
11.5
2.2
46
27
400
40
– 55 ... + 150
E
55/150/56
Pin
Values
10
3.1
75
TEMPFET
1
G
Ordering Code
C67078-S5015-A2
®
2
D
Unit
V
A
W
K/W
BTS 113 A
C
3
S
1
19.02.04
2
3

Related parts for BTS 113A

BTS 113A Summary of contents

Page 1

... Features N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab V Type DS BTS 113A 60 V Maximum Ratings Parameter Drain-source voltage R Drain-gate voltage Gate-source voltage T Continuous drain current ISO drain current ˚ ...

Page 2

Electrical Characteristics unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...

Page 3

Electrical Characteristics (cont’ unless otherwise specified. j Parameter Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage 11 Reverse recovery time ...

Page 4

Examples for short-circuit protection – 55 ... + 150 C, unless otherwise specified. j Parameter Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time before short circuit j I Short-circuit protection SC ...

Page 5

P Max. power dissipation tot Typical output characteristics : t Parameter Typ. drain-source on-state resistance DS(on) Parameter Safe operating area D DS Parameter: ...

Page 6

Drain-source on-state resistance DS(on Parameter: = – 4 Typ. transfer characteristic Parameter = 80 ...

Page 7

I Continuous drain current D V Parameter: 4 Typ. gate-source leakage current GSS Parameter Forward characteristics of ...

Page 8

Transient thermal impedance : Parameter = / thJC p 8 ® TEMPFET BTS 113 A 19.02.04 ...

Page 9

TO 220 AB Ordering Code Standard C67078-S5015-A3 9.9 4.4 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 TO 220 AB SMD Version ...

Page 10

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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