BTS 110 Infineon Technologies, BTS 110 Datasheet

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BTS 110

Manufacturer Part Number
BTS 110
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 110

Packages
P-TO220-3
Channels
1.0
Vds (max)
100.0 V
Id(nom)
1.75 A
Rds (on) (max)
200.0 mOhm
Id(lim) (min)
-
Type
BTS 110
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Continuous drain current,
ISO drain current
T
Pulsed drain current,
Short circuit current,
Short circuit dissipation,
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Features
C
= 85 C,
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
V
GS
V
100 V
= 10 V,
DS
R
GS
V
= 20 k
DS
T
T
T
T
C
j
j
C
I
10 A
= 0.5 V
= – 55 ... + 150 C
= – 55 ... + 150 C
= 25 C
D
= 25 C
R
0.2
DS(on)
1
Symbol
V
V
V
I
I
I
I
P
P
T
R
R
D
D-ISO
D puls
SC
j
DS
DGR
GS
SCmax
tot
th JC
th JA
,
Package
TO-220AB
T
stg
Pin
100
100
10
1.75
40
37
500
40
– 55 ... + 150
E
55/150/56
Values
20
3.1
75
1
G
TEMPFET
Ordering Code
C67078-A5008-A2
2
D
Unit
V
A
W
K/W
®
C
BTS 110
3
S
1 2
19.02.04
3

Related parts for BTS 110

BTS 110 Summary of contents

Page 1

... DS V 100 DGR 1.75 D-ISO puls 500 SCmax P 40 tot – 55 ... + 150 j stg – E – 55/150/ ® TEMPFET BTS 110 Ordering Code C67078-A5008-A2 Unit – K/W 19.02.04 ...

Page 2

... Symbol V (BR)DSS V GS(th) I DSS I GSS R DS(on iss C oss C rss d(on d(off ® TEMPFET BTS 110 Values min. typ. max. 100 – – 2.5 3.0 3.5 – – 100 300 – 10 100 – 2.0 4.0 – 0.17 0.2 2.7 3.8 8.0 – 450 600 – 150 240 – ...

Page 3

... TS(on kHz I TS(on 150 TS(on) t off 3 ® TEMPFET BTS 110 Values min. typ. max. – – 10 – – 40 – 1.1 1.4 – 170 – – 0.30 – – 1.4 1.5 – – 10 – – 10 – – ...

Page 4

... Parameter Diagram to determine for SC j Symbol SC(off Max. gate voltage DS Parameter: = – 55 ... +150 C 4 ® TEMPFET BTS 110 Examples 1 2 – – 7.3 5.5 – 33.3 16.6 – 500 500 – – GS(SC – 55 ... + 150 C j Unit ...

Page 5

... P Max. power dissipation tot Typical output characteristics : t Parameter = Typ. drain-source on-state resistance DS(on) Parameter Safe operating area D DS Parameter: 5 ® TEMPFET BTS 110 0.01 19.02.04 ...

Page 6

... Drain-source on-state resistance DS(on Parameter: = – Typ. transfer characteristic Parameter = TEMPFET V Gate threshold voltage : Parameter = , = (spread) g Typ. transconductance Parameter ® BTS 110 GS(th 19.02.04 ...

Page 7

... Continuous drain current D V Parameter Typ. gate-source leakage current GSS Parameter Forward characteristics of reverse diode Parameter Typ. capacitances Parameter: 7 ® TEMPFET BTS 110 ) : (spread MHz GS 19.02.04 ...

Page 8

... Transient thermal impedance : Parameter = / thJC p 8 ® TEMPFET BTS 110 19.02.04 ...

Page 9

... TO 220 AB Ordering Code Standard C67078-A5008-A2 9.9 4.4 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 TO 220 AB SMD version E3045 1.3 0.5 2.4 GPT05155 9 ® TEMPFET BTS 110 Ordering Code C67078-A5008-A4 19.02.04 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. TEMPFET 10 ® BTS 110 19.02.04 ...

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