BF998 Infineon Technologies, BF998 Datasheet

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BF998

Manufacturer Part Number
BF998
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF998

Packages
SOT143-4-1
Id (max)
30.0 mA
Ptot (max)
200.0 mW
Gfs (typ)
24.0 mS
Gp (typ)
20.0 dB
F (typ)
1.8 dB

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Silicon N_Channel MOSFET Tetrode
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF998
BF998R
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
T
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R thJA please refer to Application Note Thermal Resistance
S
Short-channel transistor
For low-noise, gain-controlled
Pb-free (RoHS compliant) package
Qualified according AEC Q101
with high S / C quality factor
input stage up to 1 GHz
76 °C, BF998, BF998R
Package
SOT143
SOT143R
2)
, BF998, BF998R
1=S
1=D
1)
2=D
2=S
1
Pin Configuration
3=G2
3=G1
Symbol
V
I
P
T
T
Symbol
R
D
I
stg
ch
DS
tot
thchs
G1/2SM
4=G1
4=G2
-
-
-55 ... 150
Value
Value
200
150
12
30
10
370
-
-
2007-04-20
BF998...
Marking
MOs
MRs
Unit
V
mA
°C
Unit
K/W

Related parts for BF998

BF998 Summary of contents

Page 1

... BF998 SOT143 BF998R SOT143R Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Total power dissipation T 76 °C, BF998, BF998R S Storage temperature Channel temperature Thermal Resistance Parameter 2) Channel - soldering point 1 Pb-containing package may be available upon special request 2 For calculation of R thJA please refer to Application Note Thermal Resistance ...

Page 2

... Gate 2 source pinch-off voltage µA DS G1S D = 25°C, unless otherwise specified A Symbol V (BR) G2S V (BR)G1SS = 0 V (BR)G2SS = 0 I G1SS I G2SS I DSS = G1S( µA -V G2S(p) 2 BF998... Values Unit min. typ. max 0.8 2 0.8 ...

Page 3

... Gain control range ...- 800 MHz DS G2S = 25°C, unless otherwise specified A Symbol g1ss = g2ss = dg1 = dss = BF998... Values Unit min. typ. max 2 ...

Page 4

... Total power dissipation P BF998, BF998R 220 mW 180 160 140 120 100 Gate 1 forward transconductance 5V Parameter DS G2S Output characteristics I tot S V G2S V G1S 26 mA ...

Page 5

... Power gain MHz 0.25 0 G1S Noise figure 800 MHz G2S G2S G2S 2007-04-20 BF998... 4 V G2S 4 V G2S ...

Page 6

... Power gain G2S f = 800 MHz - Output capacitance C dss 2.5 2 1 Gate 1 input capacitance C 2.6 pF 2.2 1.8 1.6 1.4 1 G2S = ( g1ss -2.6 -2.2 -1.8 -1.4 -1 -0.6 2007-04-20 BF998... = (V ) G1S V 0.2 V G1S ...

Page 7

... Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0. 1.7 0.8 1.2 0.8 1.2 0.8 0.8 Manufacturer RF s 2005, June Date code (YM) Pin 1 BFP181 Type code 4 3.15 Pin 1 7 BF998... 1 ±0.1 0.1 MAX 0.2 1.15 2007-04-20 ...

Page 8

... Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 0. 0.8 1.2 0.8 0.8 0.8 1.2 Reverse bar 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code 4 3.15 Pin 1 8 BF998... 1 ±0.1 0.1 MAX 0.2 1.15 2007-04-20 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 9 BF998... 2007-04-20 ...

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