BGA622 Infineon Technologies, BGA622 Datasheet

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BGA622

Manufacturer Part Number
BGA622
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BGA622

Packages
SOT343
Gain (typ)
12.0 dB
F (typ)
1.2 dB
P-1db (in)
-12
I (typ)
5.8 mA
P-1db (out)
0.5 dBm

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D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8
B G A 6 22
S i l i c o n G e r m a n i u m W i d e B a n d L o w N o i s e
A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n
S m a l l S i g n a l D i s c r et e s

Related parts for BGA622

BGA622 Summary of contents

Page 1

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Page 2

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

Page 3

... BGA622, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2005-11-16 Page Subjects (major changes since last revision) All Document layout change Trademarks ® SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 BGA622 ...

Page 4

... Pin connection Description The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level open ...

Page 5

... Data Sheet Symbol Limit Value V 3 out I 0 out I 10 Vcc tot T 150 J T -65... 150 A T -65... 150 STG V 2000 ESD Symbol Value R 300 thJS 5 BGA622 Unit dBm mW °C °C °C V Unit K/W Rev. 2.2, 2008-04-14 ...

Page 6

... RL 12 out F 1.00 50 IIP 0 3 IIP -16.5 -1dB I 130 260 tot-off I 4.0 5.8 tot- 2.0 off 6 BGA622 Electrical Characteristics Figure 2) Unit Note / Test Condition Max 0.1 GHz f dBm = 1 MHz -28 dBm IN f dBm = 1 MHz dBm IN dBm V 420 A = 2.75 V, ...

Page 7

... out F 1.05 50 IIP 3 3 IIP -13 -1dB DC, 2.75V Out, 50 150pF In, 50 BGA622_S_Parameter_Circuit.vsd 7 BGA622 Electrical Characteristics Figure 2) Unit Note / Test Condition Max dBm = 1 MHz -28 dBm IN f dBm = 1 MHz dBm IN dBm Rev. 2.2, 2008-04-14 ...

Page 8

... Figure 3 Application Circuit for 1800 - 2500 MHz Data Sheet DC, Out 2.75V 47pF (DC-Block) RFC 150pF On/Off Switch DC, 2.75V 2.2nH (for improved input match) 47pF (DC-Block) In BGA622_Application_Circuit.vsd 8 BGA622 Electrical Characteristics Rev. 2.2, 2008-04-14 ...

Page 9

... Frequency [GHz] Matching | f( 2.75V 5.8mA CC tot− −2 −4 −6 −8 −10 −12 −14 −16 − − Frequency [GHz] Rev. 2.2, 2008-04-14 BGA622 6 6 ...

Page 10

... CC Data Sheet f(V ) −1dB −40 3.2 3.4 10 Measured Parameters Noise Figure 2.75V 5.8mA tot−on S 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0 0.5 1 1.5 2 2.5 Frequency [GHz] Device Current tot− parameter 8.5 3.4 8 7.5 3 6.5 2.8 6 2.6 5.5 5 −40 − [°C] A Rev. 2.2, 2008-04-14 BGA622 3 80 ...

Page 11

... V [ Power Gain | f 2.14GHz parameter in °C A 15.5 15 − 12.5 2.6 2 [V] CC Data Sheet , − 3.2 3 3.2 3.4 11 Measured Parameters 2 Power Gain | f 2.14GHz parameter 14.5 14 3.4 13 2.6 12.5 −40 − [°C] A Rev. 2.2, 2008-04-14 BGA622 80 ...

Page 12

... Package Information 4 1 +0.1 0.3 Figure 4 Package Outline SOT343 Figure 5 Tape for SOT343 Data Sheet 2 ±0.2 B 1.3 ±0.1 0. +0.2 acc. to DIN 6784 2 +0.1 0.6 4 Pin 1 2.15 12 Package Information 0.9 ±0.1 0.1 max A +0.1 0.15 -0.05 0. GPS05605 0.2 1.1 Rev. 2.2, 2008-04-14 BGA622 ...

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