BFP640FESD Infineon Technologies, BFP640FESD Datasheet

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BFP640FESD

Manufacturer Part Number
BFP640FESD
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP640FESD

Packages
TSFP-4-1
Vceo (max)
4.1 V
Ic(max)
50.0 mA
Nfmin (typ)
0.65 dB
Gmax (typ)
27.0 dB
Oip3
26.0 dBm
B F P 6 4 0 F E S D
Robust High Performance Low Noise Bipolar RF Transistor
D a t a S h e e t
Revision 1.1, 2010-06-29
R F & P r o t e c t i o n D e v i c e s

Related parts for BFP640FESD

BFP640FESD Summary of contents

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Robust High Performance Low Noise Bipolar RF Transistor Revision 1.1, 2010-06- & ...

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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...

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... BFP640FESD, Robust High Performance Low Noise Bipolar RF Transistor Revision History: 2010-06-29, Revision 1.1 Previous Revision Rev.1.0: Page Subjects (major changes since last revision) 10 PRFin value added 18-21 Characteristic DC diagrams and OIP3 diagram added Trademarks of Infineon Technologies AG BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™ ...

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... List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 7 Package Information TSFP-4 Data Sheet 4 Revision 1.1, 2010-06-29 BFP640FESD Table of Contents ...

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... Source Impedance for Minimum Noise Figure S Figure 16 Output Matching 22 NF Figure 17 Noise Figure min NF Figure 18 Noise Figure min NF Figure 19 Noise Figure = 50 Figure 20 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 21 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Figure 22 Marking Description (Marking BFP640FESD: T4s Figure 23 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Data Sheet tot ...

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... MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP640FESD List of Tables Revision 1.1, 2010-06-29 ...

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... ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP640FESD TSFP-4-1 Data Sheet Pin Configuration BFP640FESD Revision 1.1, 2010-06- Marking T4s ...

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... Product Brief The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications ...

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... S – 21.5 – – 0.65 – min G – 19.5 – ass OP – 11.5 – 1dB OIP – 26 – BFP640FESD Product Brief Unit Note / Test Condition V I GHz = GHz Ω ...

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... ESD P – 200 tot T – 150 J T -55 150 Stg T measured on the emitter lead at the soldering point of the pcb BFP640FESD Maximum Ratings Unit Note / Test Condition Open base ° -55 °C A Open emitter 25° -55 °C ...

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... Application Note Thermal Resistance AN 077 thJA 250 200 150 100 Figure 1 Total Power Dissipation Data Sheet Values Min. Typ. Max. – 300 – 100 T [° tot s 11 BFP640FESD Thermal Characteristics Unit Note / Test Condition K/W – 125 150 Revision 1.1, 2010-06-29 ...

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... °C A Symbol Values Min. Typ. f – – 0. – 0. – 0 BFP640FESD Electrical Characteristics Unit Note / Test Condition Max – mA Open base V V 500 Emitter/base shortened V I 500 ...

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... Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’ Ω system, VB Bias-T IN Figure 2 BFP640FESD Testing Circuit Table 7 AC Characteristics, Parameter Maximum power gain Low noise operation point High linearity operation point Transducer gain Low noise operation point High linearity operation point ...

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... G – 31 – 23 – 29 – 0.55 min G – 26 ass OP – 11 1dB OIP – BFP640FESD Electrical Characteristics Unit Note / Test Condition Max – – Ω – – ...

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... G – 26 – 20 – 23 – 0.6 min G – 21 ass OP – 11.5 1dB OIP – BFP640FESD Electrical Characteristics Unit Note / Test Condition Max – – Ω – – ...

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... G – 21 – 15 – – 0.75 min G – 15.5 ass OP – 11.5 1dB OIP – BFP640FESD Electrical Characteristics Unit Note / Test Condition Max – – Ω – – ...

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... S – – 1.7 min G – 8 ass OP – 11 1dB OIP – I(k-(k -1) ) for k > BFP640FESD Electrical Characteristics Unit Note / Test Condition Max – – Ω – – ...

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... V V [V] [ [mA BFP640FESD Electrical Characteristics IB=325µA IB=325µA IB=275µA IB=275µA IB=225µA IB=225µA IB=175µA IB=175µA IB=125µA IB=125µA IB=75µA IB=75µA IB=25µA IB=25µA 3.5 3.5 4.0 4.0 4.5 4 Parameter 100 Revision 1 ...

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... Figure 5 Collector Current vs. Base-Emitter Voltage 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.4 Figure 6 Base Current vs. Base Emitter Forward Voltage Data Sheet 0.5 0.6 0 0.5 0.6 0 BFP640FESD Electrical Characteristics 0.8 0 0.8 0 Revision 1.1, 2010-06-29 ...

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... Figure 7 Base Current vs. Base Emitter Reverse Voltage Data Sheet 0.3 0.4 0 BFP640FESD Electrical Characteristics 0 Revision 1.1, 2010-06-29 ...

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... Order Intercept Point Data Sheet [mA GHz, = Parameter 2V, 1.5GHz 3V, 1.5GHz 2V, 2.4GHz 3V, 2.4GHz [mA] C OIP Ω BFP640FESD Electrical Characteristics 4.00V 3.00V 2.50V 2.00V 1.00V Parameters CE Revision 1.1, 2010-06-29 ...

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... Figure 11 Gain , , Data Sheet 0 MHz [GHz I² BFP640FESD Electrical Characteristics 2 Revision 1.1, 2010-06-29 ...

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... V, = Parameter in GHz max [ mA, = Parameter in GHz max BFP640FESD Electrical Characteristics 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz 50 60 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 10.00GHz 4 5 Revision 1.1, 2010-06-29 ...

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... Source Impedance for Minimum Noise Figure Data Sheet 10 GHz 10 GHz 2.4 GHz 2.4 GHz 5.5 GHz 5.5 GHz 0.45 GHz 0.45 GHz 10 GHz 10 GHz Z opt 24 BFP640FESD Electrical Characteristics 10 MHz 10 MHz ...

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... Data Sheet 10 GHz 10 GHz [GHz mA BFP640FESD Electrical Characteristics 10 MHz 10 MHz 30mA 6.0mA opt Revision 1.1, 2010-06-29 ...

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... I [mA opt [mA Ω (freq BFP640FESD Electrical Characteristics f = 10GHz f = 5.5GHz f = 2.4GHz f = 0.45GHz Parameter in GHz f = 10GHz f = 5.5GHz f = 2.4GHz f = 0.45GHz Parameter in GHz T = 25°C. A Revision 1.1, 2010-06-29 ...

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... Please consult our website and download the latest versions before actually starting your design. You find the BFP640FESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations ...

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... Package Information TSFP-4-1 Figure 20 Package Outline Figure 21 Package Foot Print Figure 22 Marking Description (Marking BFP640FESD: T4s) Figure 23 Tape Dimensions Data Sheet 1.4 ±0.05 0.2 0.55 ±0.05 ±0. 0.2 0.15 ±0.05 0.5 ±0.05 0.5 ±0.05 TSFP-4-1, -2-PO V04 0.35 0.5 0.5 TSFP-4-1, -2-FP V04 Manufacturer Manufacturer XYs XYs Marking Marking Pin 1 Pin 1 ...

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... Published by Infineon Technologies AG ...

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