BFP650F Infineon Technologies, BFP650F Datasheet - Page 3

• Manufacturer Part Number: BFP650F
• Manufacturer: Infineon Technologies

Specifications of BFP650F

• Packages: TSFP-4-1
• Vceo (max): 4.0 V
• Ic(max): 150.0 mA
• Nfmin (typ): 0.8 dB
• Gmax (typ): 21.5 dB
• Oip3: 31.0 dBm

1
2
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
I
Power gain, maximum available
I
f = 1.8 GHz
f = 6 GHz
Transducer gain
I
f = 1.8 GHz
f = 6 GHz
Third order intercept point at output
V
Z
1dB Compression point at output
I
f = 1.8 GHz
C
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 )
IP3 value depends on termination of all intermodulation frequency components.
S
CB
CE
EB
CE
= 80 mA, V
= 10 mA, V
= 10 mA, V
= 80 mA, V
= 80 mA, V
= 80 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 3 V, f = 1 MHz, V
= 3 V, I
L
= 50
C
CE
CE
CE
CE
CE
= 80 mA, f = 1.8 GHz,
CE
= 3 V, f = 1 GHz
= 3 V, f = 1.8 GHz, Z
= 3 V, f = 6 GHz, Z
= 3 V, Z
= 3 V, Z
= 3 V, Z
BE
BE
S
S
S
CB
= 0 ,
= 0 ,
= Z
= Z
= Z
= 0 ,
Sopt,
L
L
A
1)
= 50
= 50
= 25°C, unless otherwise specified
Z
2)
S
L
= Z
= Z
S
,
,
= Z
Lopt
Sopt
Sopt
,
3
Symbol
f
C
C
C
F
G
|S
IP
P
T
-1dB
cb
ce
eb
ma
21e
3
|
2
min.
15
-
-
-
-
-
-
-
-
-
-
-
Values
21.5
17.5
17.5
0.26
0.45
typ.
1.3
0.8
1.9
7.5
11
42
31
2007-08-09
max.
BFP650F
-
-
-
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dBm