BFP650F Infineon Technologies, BFP650F Datasheet - Page 4

• Manufacturer Part Number: BFP650F
• Manufacturer: Infineon Technologies

Specifications of BFP650F

• Packages: TSFP-4-1
• Vceo (max): 4.0 V
• Ic(max): 150.0 mA
• Nfmin (typ): 0.8 dB
• Gmax (typ): 21.5 dB
• Oip3: 31.0 dBm

Total power dissipation P
Transition frequency f
V
CE
550
500
450
400
350
300
250
200
150
100
50
45
40
35
30
25
20
15
10
= parameter in V, f = 1 GHz
0
5
0
0
0
15
20
30
40
45
60
60
80
I
T
C
S
[mA]
75
[°C]
T
100
=
90
tot
120
(I
105
=
C
)
140
120
(T
3.00V
2.00V
1.00V
0.50V
S
160
135
)
150
180
4
Collector-base capacitance C
f = 1 MHz
Power gain G
V
CE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
45
40
35
30
25
20
15
10
= 3 V, I
0
5
0
0
0
1
1
C
2
G
ms
|S
= 80 mA
ma
21
|
2
3
, G
2
4
ms
V
f [GHz]
CB
5
3
=
[V]
G
6
(f)
ma
4
2007-08-09
7
cb
BFP650F
8
=
5
9
(V
CB
10
6
)