2MBI75U4A-120 Fuji Electric holdings CO.,Ltd, 2MBI75U4A-120 Datasheet
2MBI75U4A-120
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2MBI75U4A-120 Summary of contents
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... SPECIFICATION Device Name : Type Name : Spec. No. : S.Miyashita Mar. 09 ’05 Y.Seki Mar. 09 ’05 T.Miyasaka K.Yamada IGBT MODULE 2MBI75U4A-120 MS5F 6060 MS5F6060 H04-004-07b ...
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Classi- Date Ind. fication Enactment Mar.-09 -’05 Revised Reliability test results a Revision May.-31 -’ Applied Content Drawn date Issued date H.Kakiki (P8/13) MS5F6060 Checked Checked ...
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... Outline Drawing ( Unit : Equivalent circuit 2MBI75U4A-120 MS5F6060 H04-004-03a ...
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Absolute Maximum Ratings ( at Tc= 25 Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Screw Mounting (*2) Terminals (*2) Torque (*1) All terminals should ...
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... Indication on module Logo of production 2MBI75U4A-120 Lot.No. 7. Applicable category This specification is applied to IGBT-Module named 2MBI75U4A-120. 8. Storage and transportation notes • The module should be stored at a standard temperature Store modules in a place with few temperature changes in order to avoid condensation on the • ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gories 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 ...
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Collector current vs. Collector-Emitter voltage (typ.) o Tj= chip 200 VGE=20V 15V 12V 150 100 Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 ...
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=9.1Ω, Tj=25 10000 1000 toff ton 100 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj=25 10000 ton toff 1000 ...
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Forward current vs. Forward on voltage (typ.) chip 200 150 o Tj=25 C Tj=125 100 Forward on voltage : Transient thermal resistance (max.) 1.00 0.10 0.01 0.001 0.010 0.100 Pulse width ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...
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Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。 case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE ...