2N60B

Manufacturer Part Number2N60B
ManufacturerFairchild Semiconductor
2N60B datasheet
 
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SSW2N60B / SSI2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
D
2
G
S
D
-PAK
SSW Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation (T
P
D
Power Dissipation (T
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
stg
Maximum lead temperature for soldering purposes,
T
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
JC
R
Thermal Resistance, Junction-to-Ambient *
JA
R
Thermal Resistance, Junction-to-Ambient
JA
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Features
• 2.0A, 600V, R
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
2
I
-PAK
G
D
S
SSI Series
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C) *
A
= 25°C)
C
Parameter
November 2001
= 5.0
@V
= 10 V
DS(on)
GS
D
! ! ! !
! ! ! !
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◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
G
! ! ! !
! ! ! !
● ●
● ●
● ●
● ●
! ! ! !
! ! ! !
S
SSW2N60B / SSI2N60B
Units
600
V
2.0
A
1.3
A
6.0
A
30
V
120
mJ
2.0
A
5.4
mJ
5.5
V/ns
3.13
W
54
W
0.43
W/°C
-55 to +150
°C
300
°C
Typ
Max
Units
--
2.32
°C/W
--
40
°C/W
--
62.5
°C/W
Rev. B, November 2001

2N60B Summary of contents