2N7002L ON Semiconductor, 2N7002L Datasheet

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2N7002L

Manufacturer Part Number
2N7002L
Description
Manufacturer
ON Semiconductor
Datasheet

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2N7002L
Small Signal MOSFET
60 V, 115 mA
N−Channel SOT−23
Features
1. The Power Dissipation of the package may result in a lower continuous drain
2. Pulse Test: Pulse Width
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
December, 2003 − Rev. 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Source Voltage
Drain−Gate Voltage (R
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Drain Current
Gate−Source Voltage
Total Device Dissipation FR−5 Board
Total Device Dissipation
Pb−Free Lead Finish
Pb−Free Package May be Available. The G−Suffix Denotes a
Semiconductor Components Industries, LLC, 2003
current.
− Continuous T
− Continuous
− Pulsed (Note 2)
− Continuous
− Non−repetitive (t
(Note 3) T
Derate above 25 C
Alumina Substrate,(Note 4) T
Derate above 25 C
A
Characteristic
= 25 C
T
Rating
C
C
= 25 C (Note 1)
= 100 C (Note 1)
p
GS
50 ms)
= 1.0 MW)
300 ms, Duty Cycle
Preferred Device
A
= 25 C
Symbol
Symbol
T
V
V
V
R
R
J
V
I
DGR
GSM
P
P
, T
DSS
DM
2.0%.
I
I
qJA
qJA
GS
D
D
D
D
stg
−55 to
Value
+150
Max
225
556
300
417
1.8
2.4
60
60
800
115
75
20
40
1
mW/ C
mW/ C
mAdc
Unit
Unit
Vdc
Vdc
Vdc
Vpk
mW
mW
C/W
C/W
C
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
2N7002LT1
2N7002LT3
2N7002LT1G
2N7002LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
1
(BR)DSS
60 V
CASE 318
Device
STYLE 21
SOT−23
2
ORDERING INFORMATION
1
http://onsemi.com
3
7.5 mW @ 10 V,
Package
(Pb−free)
R
SOT−23
SOT−23
DS(on)
500 mA
N−Channel
Publication Order Number:
MARKING DIAGRAM
702
W
& PIN ASSIGNMENT
3
2
Gate
1
MAX
10,000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
Drain
702
= Device Code
= Work Week
W
Shipping
3
2N7002L/D
I
115 mA
D
MAX
Source
2

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2N7002L Summary of contents

Page 1

... Device 2N7002LT1 2N7002LT3 2N7002LT1G 2N7002LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. ...

Page 2

... Turn−On Delay Time R Turn−Off Delay Time BODY−DRAIN DIODE RATINGS Diode Forward On−Voltage (I = 11.5 mAdc Source Current Continuous (Body Diode) Source Current Pulsed 300 ms, Duty Cycle 5. Pulse Test: Pulse Width 2N7002L ( unless otherwise noted) A Symbol V (BR)DSS 125 ...

Page 3

... V , DRAIN SOURCE VOLTAGE (VOLTS) DS Figure 1. Ohmic Region 2 200 mA D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −60 −20 +20 +60 T, TEMPERATURE ( C) Figure 3. Temperature versus Static Drain−Source On−Resistance 2N7002L 7.0 8.0 9 1.0 2 Figure 2. Transfer Characteristics 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 +100 +140 − ...

Page 4

... H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN 2.0 0.079 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N7002L/D ...

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