2SC2001

Manufacturer Part Number2SC2001
ManufacturerMicro Commercial Components
2SC2001 datasheet
 
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M C C
Features
Capable of 0.6Watts of Power Dissipation.
Collector-current 0. 7A
Collector-base Voltage 30V
Operating and storage junction temperature range: -55
Pin Configuration
Bottom View
Electrical Characteristics @ 25
Symbol
Parameter
OFF CHARACTERISTICS
V
Collector-Emitter Breakdown Voltage
(BR)CEO
(I
=10mAdc, I
=0)
C
B
V
Collector-Base Breakdown Voltage
(BR)CBO
(I
=100uAdc, I
=0)
C
E
V
Emitter-Base Breakdown Voltage
(BR)EBO
(I
=100uAdc, I
=0)
E
C
I
Collector Cutoff Current
CBO
(V
=30Vdc, I
=0)
CB
E
I
Collector Cutoff Current
CEO
(V
=20Vdc, I
=0)
CE
E
I
Emitter Cutoff Current
EBO
(V
=5.0Vdc, I
=0)
EB
C
ON CHARACTERISTICS
h
DC Current Gain
FE
(I
=100mAdc, V
=1.0Vdc)
C
CE
V
Collector-Emitter Saturation Voltage
CE(sat)
(I
=700mAdc, I
=70mAdc)
C
B
V
Base-Emitter Saturation Voltage
(BE)sat
(I
=700mAdc, I
=70mAdc)
C
B
f T
Transition Frequency
(V
=6.0Vdc, I
=10mAdc, f=30MHz)
CE
C
CLASSIFICATION OF H
FE
Rank
M
Range
90-180
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  omponents
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O
O
C to +150
C
E C
B
C Unless Otherwise Specified
O
Min
Max
Units
25
---
Vdc
30
---
Vdc
5.0
---
Adc
---
0.1
uAdc
----
0.1
Vdc
---
0.1
uAdc
90
400
---
---
0.6
Vdc
---
1.2
Vdc
50
---
MHz
L
K
135-270
200-400
2SC2001
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
B
C
D
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
2003/04/30
E
NOTE