2SC2782 Advanced Semiconductor, Inc., 2SC2782 Datasheet

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2SC2782

Manufacturer Part Number
2SC2782
Description
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
DESCRIPTION:
The
silicon NPN transistor. Designed primarily
for VHF power amplifer application up
to175 MHz band.
FEATURES:
• 175 MHz 12.5 V
• P
• Omnigold™ Metalization System
• Common Emitter configuration
MAXIMUM RATINGS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
CHARACTERISTICS
P
V
V
V
T
SYMBOL
θ
T
I
CBO
DISS
CEO
EBO
STG
G
JC
C
BV
J
BV
BV
ASI 2SC2782
= 6.4 dB at 80 W/175 MHz
C
Z
h
PG
ηC
Z
FE
OB
CL
CBO
IN
CEO
EBO
220 W @ T
NPN SILICON RF POWER TRANSISTOR
-65 °C to +175 ° C
-65 °C to +175 °C
I
I
I
V
V
V
P
V
V
C
C
E
CE
CB
CC
IN
CC
CC
= 1.0 mA
= 50 mA
= 20 mA
0.68 °C/W
= 18 W
= 5.0 V
= 12.5 V
= 12.5 V
= 12.5 V
= 12.5 V
is a12.5 V epitaxial
4.0 V
20 A
36 V
16 V
C
NONETEST CONDITIONS
T
= 25 °C
C
= 25 °C
P
P
P
I
C
OUT
OUT
OUT
= 10 A
= 80 W
= 80 W
= 80 W
Specifications are subject to change without notice.
f = 175 MHz
f = 175 MHz
f = 175 MHz
f = 1.0 MHz
DIM
PACKAGE STYLE .500 6L FLG
A
B
C
D
E
F
G
H
I
J
K
L
M
N
1 = Collecttor 2 = Base 3&4 = Emitter
MINIMUM TYPICAL MAXIMUM
4.0
6.4
16
36
10
60
---
---
.835 / 21.21
.490 / 12.45
.970 / 24.64
.150 / 3.43
.210 / 5.33
.200 / 5.08
.003 / 0.08
.090 / 2.29
.120 / 3.05
.150 / 3.81
M INIM UM
inches / m m
G
D
H
1.0 + j1.5
1.2 + j1.8
3
B
C
.725/18,42
.725 / 18.42
.045 / 1.14
.125 / 3.18
6.8
70
J
2
A
F
I
1
E
4
.865 / 21.97
.510 / 12.95
.980 / 24.89
M AXIM UM
.160 / 4.06
.220 / 5.59
.210 / 5.33
.007 / 0.18
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
inches / m m
2x Ø N
100
390
FULL R
K
---
---
2SC2782
L
M
UNITS
dB
REV. A
pF
---
%
1/1
V
V
V

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