2SC2782

Manufacturer Part Number2SC2782
ManufacturerAdvanced Semiconductor, Inc.
2SC2782 datasheet
 
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
ASI 2SC2782
The
is a12.5 V epitaxial
silicon NPN transistor. Designed primarily
for VHF power amplifer application up
to175 MHz band.
FEATURES:
• 175 MHz 12.5 V
• P
= 6.4 dB at 80 W/175 MHz
G
• Omnigold™ Metalization System
• Common Emitter configuration
MAXIMUM RATINGS
20 A
I
C
36 V
V
CBO
V
16 V
CEO
4.0 V
V
EBO
P
220 W @ T
= 25 °C
DISS
C
-65 °C to +175 ° C
T
J
-65 °C to +175 °C
T
STG
θ
0.68 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
NONETEST CONDITIONS
I
= 50 mA
BV
CEO
C
BV
I
= 20 mA
C
CBO
BV
I
= 1.0 mA
E
EBO
h
V
= 5.0 V
FE
CE
C
V
= 12.5 V
OB
CB
V
= 12.5 V
PG
CC
P
= 18 W
ηC
IN
Z
V
= 12.5 V
IN
CC
Z
V
= 12.5 V
CL
CC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
PACKAGE STYLE .500 6L FLG
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
I
= 10 A
C
f = 1.0 MHz
P
= 80 W
f = 175 MHz
OUT
P
= 80 W
f = 175 MHz
OUT
P
= 80 W
f = 175 MHz
OUT
Specifications are subject to change without notice.
C
A
1
3
2x Ø N
FULL R
D
4
2
B
E
.725/18,42
F
G
K
H
I
J
M INIM UM
M AXIM UM
inches / m m
inches / m m
.150 / 3.43
.160 / 4.06
.045 / 1.14
.210 / 5.33
.220 / 5.59
.835 / 21.21
.865 / 21.97
.200 / 5.08
.210 / 5.33
.490 / 12.45
.510 / 12.95
.003 / 0.08
.007 / 0.18
.125 / 3.18
.725 / 18.42
.970 / 24.64
.980 / 24.89
.090 / 2.29
.105 / 2.67
.150 / 3.81
.170 / 4.32
.285 / 7.24
.120 / 3.05
.135 / 3.43
1 = Collecttor 2 = Base 3&4 = Emitter
MINIMUM TYPICAL MAXIMUM
16
36
4.0
10
100
390
6.4
6.8
60
70
---
1.0 + j1.5
---
---
1.2 + j1.8
---
2SC2782
M
L
UNITS
V
V
V
---
pF
dB
%
REV. A
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