2SC2879 Advanced Semiconductor, Inc., 2SC2879 Datasheet

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2SC2879

Manufacturer Part Number
2SC2879
Description
Manufacturer
Advanced Semiconductor, Inc.
Datasheet
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
CHARACTERISTICS
DESCRIPTION:
The
transistor designed primarily for SSB
linear power amplifier applications up
tp 28 MHz.
FEATURES:
• P
• IMD
• Omnigold™ Metalization System
MAXIMUM RATINGS
V
P
V
V
SYMBOL
T
θ
T
I
CBO
DISS
CEO
EBO
STG
JC
C
BV
BV
BV
G
J
IMD
Z
ASI 2SC2879
C
h
Z
G
η
= 13 Typ. min. at 100 W/28 MHz
OUT
FE
OB
3
CES
CEO
EBO
IN
C
P
= -24 dBc max. at 100 W
3
NPN SILICON RF POWER TRANSISTOR
250 W @ T
-65 °C to +175 °C
-65 °C to +175 °C
I
I
I
V
V
V
P
V
V
C
C
E
CE
CB
CE
OUT
CC
CC
= 10 mA
= 100 mA
= 100 mA
= 12.5 V
= 12.5 V
0.6 °C/W
= 5.0 V
= 12.5 V
= 12.5 V
= 100 W
is a 12.5 V
4.0 V
25 A
45 V
18 V
C
NONETEST CONDITIONS
T
= 25 °C
C
= 25 °C
(PEP)
I
I
P
P
C
idle
OUT
OUT
= 10 A
= 100 mA
Specifications are subject to change without notice.
= 100 W
= 100 W
f = 1.0 MHz
f = 28 MHz
f = 28 MHz
f = 28 MHz
PACKAGE STYLE .500 4L FLG
DIM
MINIMUM TYPICAL MAXIMUM
A
B
C
D
E
F
G
H
I
J
K
L
13.0
4.0
45
18
10
35
---
---
FULL R
.720 / 18.28
.970 / 24.64
.495 / 12.57
.980 / 24.89
H
.220 / 5.59
.245 / 6.22
.003 / 0.08
.090 / 2.29
.150 / 3.81
C
MINIMUM
inches / mm
E
B
A
1.45 – j0.95
1.45 – J1.0
E
B
15.2
.112x45°
700
D
.125 / 3.18
.125 / 3.18
G
F
E
C
L
1.050 / 26.67
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
I
MAXIMUM
.230 / 5.84
.255 / 6.48
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
inches / mm
J
K
150
Ø.125 NOM.
-24
---
---
2SC2879
UNITS
dBc
dB
REV. A
pF
---
%
1/1
V
V
V

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