2SC2879

Manufacturer Part Number2SC2879
ManufacturerAdvanced Semiconductor, Inc.
2SC2879 datasheet
 
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
ASI 2SC2879
The
is a 12.5 V
transistor designed primarily for SSB
linear power amplifier applications up
tp 28 MHz.
FEATURES:
• P
= 13 Typ. min. at 100 W/28 MHz
G
• IMD
= -24 dBc max. at 100 W
3
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
25 A
C
V
45 V
CBO
V
18 V
CEO
V
4.0 V
EBO
P
250 W @ T
= 25 °C
DISS
C
T
-65 °C to +175 °C
J
T
-65 °C to +175 °C
STG
θ
0.6 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
NONETEST CONDITIONS
BV
I
= 100 mA
CES
C
BV
I
= 100 mA
CEO
C
BV
I
= 10 mA
EBO
E
h
V
= 5.0 V
FE
CE
C
V
= 12.5 V
OB
CB
G
P
V
= 12.5 V
CE
η
C
P
= 100 W
OUT
IMD
3
Z
V
= 12.5 V
IN
CC
Z
V
= 12.5 V
OUT
CC
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
PACKAGE STYLE .500 4L FLG
(PEP)
I
= 10 A
C
f = 1.0 MHz
I
= 100 mA
f = 28 MHz
idle
P
= 100 W
f = 28 MHz
OUT
P
= 100 W
f = 28 MHz
OUT
Specifications are subject to change without notice.
2SC2879
.112x45°
L
A
E
Ø.125 NOM.
FULL R
C
C
B
B
E
E
D
F
G
H
K
J
I
MINIMUM
MAXIMUM
DIM
inches / mm
inches / mm
.220 / 5.59
.230 / 5.84
A
.125 / 3.18
B
.245 / 6.22
.255 / 6.48
C
.720 / 18.28
.7.30 / 18.54
D
.125 / 3.18
E
.970 / 24.64
.980 / 24.89
F
.495 / 12.57
.505 / 12.83
G
.003 / 0.08
.007 / 0.18
H
.090 / 2.29
.110 / 2.79
I
.150 / 3.81
.175 / 4.45
J
.280 / 7.11
K
.980 / 24.89
1.050 / 26.67
L
MINIMUM TYPICAL MAXIMUM
45
18
4.0
10
150
700
13.0
15.2
35
-24
---
1.45 – j0.95
---
---
1.45 – J1.0
---
UNITS
V
V
V
---
pF
dB
%
dBc
REV. A
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