2SC3279 Micro Commercial Components, 2SC3279 Datasheet
2SC3279
Manufacturer Part Number
2SC3279
Description
Manufacturer
Micro Commercial Components
Datasheet
1.2SC3279.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC3279
Manufacturer:
TOSHIBA
Quantity:
3 000
Company:
Part Number:
2SC3279-M
Manufacturer:
TOSHIBA
Quantity:
77 221
Company:
Part Number:
2SC3279-M
Manufacturer:
TOSHIBA
Quantity:
5 000
Revision: 2
Features
Maximum Ratings
Electrical Characteristics @ 25
OFF CHARACTERISTICS
ON CHARACTERISTICS
(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)
(2) h
Symbol
Symbol
V
V
V
M C C
V
V
V
V
h
h
T
(BR)CEO
(BR)EBO
I
I
V
CE(sat)
C
CBO
EBO
P
FE(1)
FE(2)
T
STG
f
High DC Current Gain and excellent h
CEO
CES
CBO
EBO
I
I
C
B
BE
T
ob
h
h
C
J
FE(1)
FE(1)
FE(2)
Classification
=140-600 (V
=70 (Min.), 200 (Typ.) (V
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - DC
Base Current
Collector power dissipation
Junction Temperature
Storage Temperature
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Collector Output Capacitance
Base Saturation Voltage
(I
(I
(V
(V
(I
(I
(I
(I
(V
(V
C
E
C
C
C
C
Pin Configuration
=10mAdc, I
=1.0mAdc, I
=0.5Adc, V
=2.0Adc, V
=2.0Adc, I
=2.0Adc, V
CB
EB
CE
CB
Bottom View
=30Vdc,I
=6.0Vdc, I
=1.0Vdc, I
=10Vdc, I
Parameter
Pulsed
CE
L: 140-240, M: 200-330, N: 300-450, P: 420-600
B
=1.0V, I
B
E
=50mAdc)
Rating
CE
CE
CE
C
E
=0)
=0)
C
(2)
C
=0)
=0, f=1.0MHz)
=0)
=1.0Vdc)
=1.0Vdc)
=1.0Vdc)
=0.5Adc)
(1)
www.mccsemi.com
C
=0.5A)
CE
O
C Unless Otherwise Specified
=1.0V, I
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
E C
FE
100
Min
6.0
140
Linearity
10
---
---
70
C
B
---
---
---
=2.0A)
-55 to +150
-55 to +150
Rating
750
6.0
2.0
5.0
0.2
Typ
150
10
30
30
0.86
200
---
---
---
---
0.2
27
---
Max
600
0.1
0.1
---
---
0.5
1.5
---
---
---
Unit
O
O
mW
V
V
V
V
A
A
Units
uAdc
uAdc
C
C
Vdc
Vdc
Vdc
Vdc
MHz
pF
---
---
DIM
Epitaxial Transistors
C
D
G
A
B
E
MIN
.175
.175
.500
.016
.135
.095
A
G
NPN Silicon
INCHES
2SC3279
D
MAX
.185
.185
.020
.145
.105
TO-92
---
DIMENSIONS
MIN
4.45
4.46
12.7
0.41
3.43
2.42
C
B
MM
MAX
4.70
4.70
0.63
3.68
2.67
---
2003/04/30
E
NOTE
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2SC3279 Summary of contents
Page 1
... C C Unless Otherwise Specified O Min Typ Max Units 10 --- --- 6.0 --- --- Vdc --- --- 0.1 uAdc --- --- 0.1 uAdc 140 --- 600 70 200 --- --- 0.2 0.5 --- 0.86 1.5 100 150 --- --- 27 --- 2SC3279 NPN Silicon Epitaxial Transistors TO-92 A Vdc D G --- DIMENSIONS --- INCHES DIM MIN MAX MIN A .175 .185 4.45 Vdc B .175 .185 4.46 C .500 --- 12.7 Vdc D .016 .020 0.41 E .135 .145 3.43 G .095 ...
Page 2
... Revision 2003/04/30 ...