2SC3357 NEC, 2SC3357 Datasheet
2SC3357
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2SC3357 Summary of contents
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... NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP 8.0 dB TYP. @V ...
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... UNIT 1 120 300 6.5 GHz 0.65 1 1.1 dB 1.8 3 125 to 250 = 0.5 0.3 150 0 2SC3357 TEST CONDITIONS 1 1.0 MHz mA 1.0 GHz mA ...
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... INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY 0.1 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT 2SC3357 1.0 GHz -Collector Current- max 21e 0.2 0.4 0.6 0.8 1.0 f-Frequency-GHz 100 dB V/ ...
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... 13.430 98.1 0.042 6.930 87.2 0.081 4.690 79.4 0.119 3.560 75.2 0.154 2.878 68.2 0.191 2.439 65.4 0.220 2.133 59.0 0.257 1.898 57.3 0.280 1.693 52.9 0.311 1.591 52.0 0.341 2SC3357 21.1 74.5 0.444 25.3 77.4 0.398 26.9 77.5 0.399 28.9 78.0 0.414 33.5 78.4 0.440 75.7 0.461 33.3 71.7 0.479 36.3 35.5 73.1 0.499 38.8 71.3 0.515 35.9 71.8 0.537 ...
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... GHz S 11 REACTANCE COMPONENT ( R ) –––– 0.2 GHz 0.2 GHz 2.0 GHz 90 120 60 30 150 0 180 150 60 120 2SC3357 50 S -FREQUENCY 12e CONDITION 2.0 GHz 30 S 12e f = 0.2 GHz 0 0.1 0.2 0.3 0.4 0 ...
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... [MEMO] 6 2SC3357 ...
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... [MEMO] 2SC3357 7 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC3357 M4 96. 5 ...