2SD1266 Panasonic, 2SD1266 Datasheet
2SD1266
Manufacturer Part Number
2SD1266
Description
Manufacturer
Panasonic
Datasheet
1.2SD1266.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1266
Manufacturer:
PANASONIC
Quantity:
10 000
Part Number:
2SD1266-P
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD1266A
Manufacturer:
PANASONIC
Quantity:
10 000
Company:
Part Number:
2SD1266A
Manufacturer:
PANASONIC
Quantity:
250
Part Number:
2SD1266A
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• Full-pack package which can be installed to the heat sink with one screw
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1266
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
2. * : Rank classification
Parameter
Rank
Parameter
h
FE1
2SD1266
2SD1266A
2SD1266A
T
70 to 150
C
2SD1266
2SD1266A
2SD1266
2SD1266A
2SD1266
2SD1266A
= 25°C
Q
FE
a
Symbol
which has satisfactory linearity
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
I
T
V
h
CBO
CEO
EBO
a
CP
I
I
h
C
stg
V
I
CE(sat)
C
FE1
120 to 250
CEO
EBO
t
t
j
CES
f
CEO
FE2
= 25°C
stg
t
on
BE
T
f
*
CE(sat)
P
−55 to +150
Rating
I
V
V
V
V
V
V
V
V
I
V
I
V
C
C
C
150
CC
2.0
CE
CE
CE
CE
CE
EB
CE
CE
CE
60
80
60
80
35
= 30 mA, I
= 3 A, I
= 1 A, I
6
3
5
SJD00283BED
= 4 V, I
= 60 V, V
= 80 V, V
= 30 V, I
= 60 V, I
= 6 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 50 V
160 to 320
B
B1
= 0.375 A
C
C
C
C
O
= 0.1 A, I
Conditions
Unit
B
B
B
C
= 3 A
= 0
= 1 A
= 3 A
°C
°C
W
BE
BE
V
V
V
A
A
= 0
= 0
= 0
= 0.5 A, f = 10 MHz
= 0
= 0
B2
= − 0.1 mA
Min
60
80
70
10
1
10.0
5.5
2
±0.2
±0.2
3
5.08
2.54
Typ
0.5
2.5
0.4
1.4
0.8
30
φ 3.1
±0.5
±0.3
±0.1
±0.1
TO-220F-A1 Package
±0.1
Max
200
200
300
300
320
1.8
1.2
2.7
1
1.3
0.5
±0.2
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
±0.2
+0.2
–0.1
4.2
Unit: mm
±0.2
MHz
Unit
mA
µA
µA
µs
µs
µs
V
V
V
1
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2SD1266 Summary of contents
Page 1
... Low collector-emitter saturation voltage V • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings T Parameter 2SD1266 Collector-base voltage (Emitter open) 2SD1266A Collector-emitter voltage 2SD1266 (Base open) 2SD1266A Emitter-base voltage (Collector open) Collector current Peak collector current = 25°C T ...
Page 2
... ( (2) With a 100 × 100 × heat sink (3) With a 50 × 50 × heat sink (1) (4) Without heat sink = (2) 10 (3) ( 120 160 Ambient temperature T (°C) a I ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...