2SK1299 Renesas Electronics Corporation., 2SK1299 Datasheet

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2SK1299

Manufacturer Part Number
2SK1299
Description
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1299-L
Manufacturer:
HITACHI
Quantity:
38 500
Part Number:
2SK1299L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK1299S
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK1299STL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000

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2SK1299 Summary of contents

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Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may ...

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... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 ...

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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS ...

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... V — 1.0 — — 135 — rr 2SK1299(L), 2SK1299(S) Unit Test conditions mA 100 mA, V ...

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... Power vs. Temperature Derating 100 Case Temperature T Typical Output Characteristics 4 Drain to Source Voltage 0.5 0.2 0.1 0.05 150 (° Pulse Test (V) DS Maximum Safe Operation Area ...

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... Gate to Source Voltage V GS Static Drain to Source on State Resistance vs. Temperature 0 0.2 0.1 Pulse Test 0 – Case Temperature T C 2SK1299(L), 2SK1299(S) Static Drain to Source on State 5 Pulse Test 0.5 0.2 0.1 0.05 0 (V) Forward Transfer Admittance Pulse Test ...

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... Body to Drain Diode Reverse Recovery Time 500 200 100 50 20 di/ Pulse Test 5 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics 200 160 25 V 120 Gate Charge Qg (nc) ...

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... Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.1 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor D.U.T 50 Vin = 10 V 2SK1299(L), 2SK1299(S) Reverse Drain Current vs. Source to Drain Voltage Pulse Test – 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( ...

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... Package Dimensions 1.15 0.1 0.8 0.1 2.29 0.5 8 6.5 0.5 2.3 5.4 0.5 0.55 1.2 0.55 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm 0.2 0.1 0.3 0.1 DPAK (L)-(1) — Conforms 0.42 g ...

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... As of January, 2001 2.3 0.2 (4.9) 0.55 0.1 0 – 0.25 0.55 0.1 Hitachi Code DPAK (S)-(1),(2) JEDEC — EIAJ Conforms Mass (reference value) 0.28 g Unit ...

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... Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm (5.1) DPAK (S)-(3) — Conforms 0.28 g ...

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... Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 2SK1299(L), 2SK1299(S) Hitachi Asia Ltd. Hitachi Asia (Hong Kong) Ltd. Hitachi Tower Group III (Electronic Components) 16 Collyer Quay #20-00, 7/F., North Tower, Singapore 049318 World Finance Centre, Tel : < ...

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