2SK2998

Manufacturer Part Number2SK2998
ManufacturerTOSHIBA Semiconductor CORPORATION
2SK2998 datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (660Kb)Embed
Next
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Chopper Regulator, DC−DC Converter Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
Enhancement mode
: V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
2SK2998
: R
= 11.5 Ω (typ.)
DS (ON)
: |Y
| = 0.4 S (typ.)
fs
= 100 μA (max) (V
= 500 V)
DS
= 2.0~4.0 V (V
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
500
V
DSS
V
500
V
DGR
V
±30
V
GSS
I
0.5
A
D
I
1.5
A
DP
P
0.9
W
D
T
150
°C
ch
T
−55~150
°C
stg
Symbol
Max
Unit
R
138
°C / W
th (ch−a)
1
2SK2998
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
2006-11-06

2SK2998 Summary of contents