5STP08G6500 ABB, 5STP08G6500 Datasheet

no-image

5STP08G6500

Manufacturer Part Number
5STP08G6500
Description
Manufacturer
ABB
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5STP08G6500
Manufacturer:
ON
Quantity:
12 000
Part Number:
5STP08G6500
Quantity:
119
Blocking
V
Mechanical data
F
a
m
D
D
ABB Semiconductors AG reserves the right to change specifications without notice.
Part Number
V
V
V
I
I
dV/dt
V
I
I
I
V
r
DSM
RSM
TAVM
TRMS
TSM
DRM
M
S
a
T
DSM
DRM
RSM1
DSM
T0
/ V
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
crit
Mounting force
Acceleration
Device unclamped
Device clamped
Weight
Surface creepage distance
Air strike distance
RRM
V
V
=
=
=
=
=
=
RSM
RRM
are equal to V
11600 A
0.970 mΩ Ω Ω Ω
6500 V
1200 A
5STP
1.22 V
760 A
6500 V
5600 V
7000 V
DSM
/ V
RSM
nom.
max.
min.
values up to T
5STP 08G6200 5STP 08G5800 Conditions
Phase Control Thyristor
≤ 200 mA
≤ 200 mA
6200 V
5300 V
6700 V
100
0.6 kg
22 kN
14 kN
24 kN
50
38 mm
21 mm
2000 V/µs
j
= 110°C
m/s
m/s
5STP 08G6500
2
2
5800 V
4900 V
6300 V
t
Exp. to 0.67 x V
f = 5 Hz, t
f = 50 Hz, t
V
V
p
DSM
RSM
= 5ms, single pulse
p
p
= 10ms
= 10ms
DRM
Doc. No. 5SYA1006-03 Sep. 01
T
, T
j
= 125°C
j
= 125°C

Related parts for 5STP08G6500

5STP08G6500 Summary of contents

Page 1

... Acceleration Device unclamped Device clamped m Weight D Surface creepage distance S D Air strike distance a ABB Semiconductors AG reserves the right to change specifications without notice. Phase Control Thyristor 5STP 08G6500 5STP 08G6200 5STP 08G5800 Conditions 6200 V 5800 V 5300 V 4900 V 6700 V 6300 V ≤ 200 mA ≤ 200 mA 2000 V/µ ...

Page 2

... Peak forward gate voltage FGM I Peak forward gate current FGM V Peak reverse gate voltage RGM P Gate power loss G ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1006-03 Sep. 01 760 A Half sine wave, T 1200 A 11600 12300 673 ...

Page 3

... C ln( iT Valid for i = 400 – 3000 -2.676495 0.00153 0.922004 Fig. 2 On-state characteristics. T =125°C, 10ms half sine j ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1006-03 Sep. 01 -40…140 °C 43 K/kW 45 K/kW 22 K/kW Z [K/kW] thJC 25 20 τ ...

Page 4

... Fig. 4 On-state power dissipation vs. mean on- state current. Turn - on losses excluded. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1006-03 Sep. 01 Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 7 Surge on-state current vs. number of pulses ...

Page 5

... T 3 ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1006-03 Sep. 01 Fig. 9 Max. peak gate power loss. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. Fig (-di /dt ...

Page 6

... Half sinusoidal waves. Fig f 125°C. off Half sinusoidal waves. t ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email abbsem@ch.abb.com Internet www.abbsem.com Fig Fig ...

Related keywords