6MBP50TEA120 Fuji Electric holdings CO.,Ltd, 6MBP50TEA120 Datasheet

no-image

6MBP50TEA120

Manufacturer Part Number
6MBP50TEA120
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
6MBP50TEA120
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
6MBP50TEA120
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Part Number:
6MBP50TEA120
Quantity:
50
Part Number:
6MBP50TEA120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
6MBP50TEA120
Econo IPM series
Item
Bus voltage
Collector-Emitter voltage *1
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Note
· Temperature protection provided by directly detecting the junction
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
temperature of the IGBTs
built-in control circuit
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Features
Maximum ratings and characteristics
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W, N and U or V or W
*2 : 125
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
Collector current
*3 : Pc=125
Collector power dissipation One transistor *3
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*8 : Immersion time 10
°C
/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100%
°C
/IGBT Rth(j-c)=125/0.44=287W [Inverter]
±
1sec.
Mounting (M5)
DC
DC
1ms
Surge
Short operating
DC
Symbol
V
V
V
V
I
I
-I
P
V
V
I
V
I
T
T
T
T
V
CP
in
ALM
C
opr
stg
C
C
j
sol
DC
DC(surge)
CES
ALM
iso
SC
CC
in
400
Min.
-20
-40
0
0
0
-
-
-
-
-
-
-
-
-
-
-0.5
-0.5
-0.5
Rating
1200V / 50A 6 in one-package
1000
1200
AC2500
Vcc+0.5
900
800
100
287
150
100
125
260
Vcc
Max.
20
50
50
20
3
3.5
Unit
V
V
V
V
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m

Related parts for 6MBP50TEA120

6MBP50TEA120 Summary of contents

Page 1

... Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...

Page 2

... Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Turn-on time Turn-off time Reverse recovery time Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver ...

Page 3

... Vin Vin Vin(th) Vin(th /Vin /Vin Vge (Inside IPM ) Vge (Inside IPM ) Fault (Inside IPM Fault (Inside IPM ) ) normal normal /ALM /ALM ALM ALM VccU VccU 20k 20k IPM IPM DC DC VinU VinU 15V 15V SW1 SW1 ...

Page 4

... Block diagram VccU VccU VinU VinU 1.5k 1.5k ALM ALM Vz Vz GNDU GNDU 1 1 Vcc V Vcc VinV VinV 1.5k 1.5k ALM ALM Vz Vz GNDV GNDV 5 5 VccW VccW 12 12 VinW VinW 11 11 ...

Page 5

... Characteristics Control circuit characteristics (Representative) Power supply current vs. Switching frequency Tc=125°C (typ.) 50 P-side N-side Switching frequency : fsw (kHz) Under voltage vs. Junction temperature (typ Junction temperature : Tj (°C) Alarm hold time vs. Power supply voltage (typ ...

Page 6

... Main circuit characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C / Chip 100 80 Vcc=17V 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C / Chip 100 80 Vcc=17V 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Forward current vs. Forward voltage (typ.) ...

Page 7

... Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj= Collector current : Ic ( bias ope ra ting c=1 5V, Tj<= 125 ° (non-repe titive puls BSO A (R epe titive puls e) ...

Page 8

... Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=25 C 10000 1000 100 Collector current : Ic (A) Reverse recovery characteristics trr,Irr vs.IF (typ.) 100 Forward current:IF(A) Switching tim e vs. Collector current (typ.) 10000 toff 1000 ton 100 ...

Related keywords