APT25GP120BDQ1 Advanced Power Technology, APT25GP120BDQ1 Datasheet

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APT25GP120BDQ1

Manufacturer Part Number
APT25GP120BDQ1
Description
Manufacturer
Advanced Power Technology
Datasheet

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Part Number:
APT25GP120BDQ1G
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APT25GP120BDQ1G
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The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• SSOA Rated
CE
CE
CE
= V
= 900V, V
= 900V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
= 0V, T
= 0V, T
IGBT
= 25A, T
= 25A, T
j
C
= 25°C)
j
j
= 350µA)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
MIN
900
APT25GP90BDQ1(G)
3
110A @ 900V
APT25GP90BDQ1
APT25GP90BDQ1G*
-55 to 150
TYP
900
±30
110
417
300
4.5
3.2
2.7
72
36
APT25GP90BDQ1(G)
900V
G
G
C
±100
1000
E
MAX
350
3.9
6
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT25GP120BDQ1 Summary of contents

Page 1

TYPICAL PERFORMANCE CURVES POWER MOS 7 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V = 15V -55° 25° 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 120 ...

Page 4

V = 15V 600V 25°C or 125° 4.3Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE ...

Page 5

TYPICAL PERFORMANCE CURVES 5,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.35 0. 0.9 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0.1 0.05 ...

Page 6

APT15DQ100 90% Gate Voltage t d(off) Collector Voltage 90 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J Gate Voltage 10 ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I Maximum Average Forward Current ( RMS Forward Current (Square wave, 50% duty RMS Non-Repetitive Forward Surge ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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