APT35GP120B Advanced Power Technology, APT35GP120B Datasheet

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APT35GP120B

Manufacturer Part Number
APT35GP120B
Description
Manufacturer
Advanced Power Technology
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT35GP120B
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT35GP120B2D2
Manufacturer:
FSC
Quantity:
4 300
Company:
Part Number:
APT35GP120BG
Quantity:
3 500
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
RBSOA
T
Symbol
V
V
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
(V
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= V
= V
GE
GE
• 100 kHz operation @ 800V, 14A
• 50 kHz operation @ 800V, 25A
• RBSOA rated
C
C
C
GE
GE
CES
CES
= 25°C
= 25°C
= 110°C
= 15V, I
= 15V, I
, I
= ±20V)
, V
, V
J
C
= 150°C
GE
GE
GE
= 1mA, T
®
C
C
= 0V, I
= 0V, T
= 0V, T
= 35A, T
= 35A, T
IGBT
j
C
= 25°C)
j
j
= 25°C)
= 125°C)
= 250µA)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
APT35GP120B
C
= 25°C unless otherwise specified.
1200
MIN
3
APT35GP120B
140A @ 960V
-55 to 150
G
TYP
1200
4.5
3.3
±20
±30
140
543
300
C
3
96
46
E
TO-247
2500
±100
MAX
250
3.9
6
G
1200V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E

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APT35GP120B Summary of contents

Page 1

... CE CES 0V 125°C) CE CES ±20V) GE APT Website - http://www.advancedpower.com APT35GP120B TO-247 25°C unless otherwise specified. C APT35GP120B 1200 ±20 ± 140 140A @ 960V 543 -55 to 150 300 MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3 250 2 2500 ± ...

Page 2

... Inductive Switching (125° 800V 15V 35A +125° test circuit. (See Figures 21, 22.) on2 APT35GP120B MIN TYP MAX 3240 248 = 25V 31 7 150 21 62 140 960V TBD 1740 907 ...

Page 3

... -55° 25°C. <0.5 % DUTY CYCLE I 17. FIGURE 6, On State Voltage vs Junction Temperature 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT35GP120B 10V. 250µs PULSE TEST 70 <0.5 % DUTY CYCLE =25° =125°C 20 ...

Page 4

... FIGURE 14, Turn Off Energy Loss vs Collector Current 7000 6000 5000 4000 E 70A off 3000 35A off 2000 E off 1000 17. FIGURE 16, Switching Energy Losses vs Junction Temperature APT35GP120B V =15V,T =125° 10V,T =125° =15V,T =25° 10V,T =25° 800V = ...

Page 5

... C J ° 800V COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector APT35GP120B , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak 1.0 F min(f max f max1 max 2 ...

Page 6

... BSC 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 19.81 (.780) 0.79 (.031) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT35GP120B Gate Voltage 10% t d(on 90% Collector Current 10 Collector Voltage V TEST *DRIVER SAME TYPE AS D.U. ...

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