BFG235 Infineon Technologies AG, BFG235 Datasheet
BFG235
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BFG235 Summary of contents
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... Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor f = 5.5 GHz T ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Marking BFG 235 BFG235 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature ...
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Electrical Characteristics at T Parameter DC characteristics Collector-emitter breakdown voltage = 1 mA Collector-emitter cutoff current = Collector-base cutoff current = ...
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Electrical Characteristics at T Parameter AC characteristics (verified by random sampling) Transition frequency = 200 mA 200 MHz Collector-base capacitance = MHz V CB Collector-emitter capacitance ...
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Total power dissipation P * Package mounted on epoxy 2200 mW 1800 1600 1400 1200 T A 1000 800 600 400 200 Permissible Pulse Load K 0.5 0.2 0.1 ...
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Collector-base capacitance 1MHz Power Gain f 0.9GHz V = Parameter ...
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Power Gain f f Parameter 14 =200mA Power Gain ...