BFT92 Infineon Technologies AG, BFT92 Datasheet

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BFT92

Manufacturer Part Number
BFT92
Description
Manufacturer
Infineon Technologies AG
Datasheet

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PNP Silicon RF Transistor


ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Thermal Resistance
Type
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Ambient temperature
Storage temperature
Junction - soldering point
BFT92
Total power dissipation
T
1 T
2 For calculation of R
For broadband amplifiers up to 2 GHz
Complementary type: BFR 92P (NPN)
S
at collector currents up to 20 mA
S

is measured on the collector lead at the soldering point to the pcb
78 °C
1)
thJA
please refer to Application Note Thermal Resistance
Marking
W1s
2)
1 = B
Pin Configuration
1
2 = E
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
3 = C
3
-65 ... 150
-65 ... 150
Value

200
150
15
20
20
25
360
2
3
Package
SOT23
1
Jul-16-2001
VPS05161
BFT92
Unit
K/W
V
mA
mW
°C
2

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BFT92 Summary of contents

Page 1

... Application Note Thermal Resistance thJA Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFT92 VPS05161 Package SOT23 Value Unit 200 mW 150 °C -65 ... 150 -65 ... 150 K/W 360  Jul-16-2001 ...

Page 2

... Collector-base cutoff current Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CBO I EBO BFT92 Values Unit min. typ. max 100 µ Jul-16-2001 ...

Page 3

... 900 MHz f = 1.8 GHz (k-(k - 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt |S 21e = 1 Values min. typ. max. 3 0.54 0 Jul-16-2001 BFT92 Unit GHz pF dB ...

Page 4

... 10.297 - IKR = 0.019729 7.9562  RE = 1.5119  VJE = 0.79082 V XTF = 0.30227 - PTF = 0 deg MJC = 0.3 - CJS = 0 fF XTB = 0.75167 - 4 BFT92 NF = 0.90551 - ISE = 12.196 1.2703 - ISC = 0.024709 fA IRB = 0.79584 0.66749  MJE = 0.32167 - VTF = 0.21451 V CJC = 922.07 fF XCJC = 0.3 - VJS = 0. 1.11 ...

Page 5

... S 120 °C 100 150 Permissible Pulse Load thJS p P totmax totDC 0.005 0.01 0.02 0.05 1 0.1 0.2 0 Jul-16-2001 BFT92 - ...

Page 6

... Transition frequency Parameter CE 6.0 GHz 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Power Gain 1.8GHz V = Parameter CE 8.5 dB 10V 8V 7 6.0 2V 5.0 1V 4.0 0.7V 3.0 2.0 1.0 0 10V f 10V Jul-16-2001 BFT92 0. 0. ...

Page 7

... Power Gain | 10V 0.7 -2 2.5 GHz 3 f(f) 21 Parameter I =15mA C 0.7V 0.5 1.0 1.5 2.0 2.5 Jul-16-2001 BFT92 =f 10V 2V GHz 3.5 f ...

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