BSM200GB120DL Infineon Technologies AG, BSM200GB120DL Datasheet

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IGBT Power Module Preliminary data • Low Loss IGBT • Low inductance halfbridge • Including fast free- wheeling diodes • Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage R ...

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Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 200 ...

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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 4.7 Gon Rise time V = 600 ...

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Power dissipation tot C parameter: T 150 °C j 1500 W 1300 P 1200 tot 1100 1000 900 800 700 600 500 400 300 200 100 Collector current I ...

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Typ. output characteristics parameter µ ° 400 A 17V 15V I 13V C 300 11V 9V 7V 250 200 150 100 ...

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Typ. gate charge Gate parameter 200 A C puls 600 200 400 600 Reverse biased safe operating ...

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Typ. switching time inductive load , T = 125° par 600 ± ...

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Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 400 300 250 T =125°C j 200 150 100 50 0 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance Z ...

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Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group Circuit Diagram 9 BSM 200 GB 120 DL Feb-14-1997 ...