BTS130 Infineon Technologies AG, BTS130 Datasheet
BTS130
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BTS130 Summary of contents
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TEMPFET Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Type V DS BTS 130 50 V Maximum Ratings Parameter Drain-source voltage R Drain-gate voltage Gate-source ...
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Electrical Characteristics unless otherwise specified. j Parameter Static Characteristics Drain-source breakdown voltage 0. Gate threshold voltage ...
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Electrical Characteristics (cont’ unless otherwise specified. j Parameter Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage Reverse recovery time ...
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Examples for short-circuit protection – 55 ... + 150 C, unless otherwise specified. j Parameter Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time before short circuit j I Short-circuit protection SC ...
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P Max. power dissipation tot Typical output characteristics Parameter : Semiconductor Group Typ. drain-source on-state resistance DS(on) Parameter Safe operating area ...
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Drain-source on-state resistance DS(on) j Parameter (spread Typ. transfer characteristic Parameter : ...
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I Continuous drain current Parameter Typ. gate-source leakage current GSS C Parameter Semiconductor Group Forward characteristics ...
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Transient thermal impedance Parameter : Semiconductor Group thJC p 8 BTS 130 ...
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TO 220 AB Standard C67078-A5001-A3 9.9 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group TO 220 AB Ordering Code SMD ...