BU2520DF Philips Semiconductors, BU2520DF Datasheet

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BU2520DF

Manufacturer Part Number
BU2520DF
Description
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU2520DF
Manufacturer:
EPCOS
Quantity:
3 213
Part Number:
BU2520DF
Manufacturer:
PHILIPS
Quantity:
14 513
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emmiter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
C
F
Csat
BE
hs
BE
hs
1
= 6.0 A
= 6.0 A; I
2
= 0 V
= 6.0 A; I
= 0 V
25 ˚C
3
25 ˚C
B
= 1.2 A
B(end)
= 1.0 A
SYMBOL
b
TYP.
TYP.
MIN.
0.35
Product specification
-65
35
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU2520DF
MAX.
MAX.
MAX.
1500
e
1500
c
800
800
150
150
150
5.0
2.2
0.5
2.8
10
25
45
10
25
45
6
9
6
-
-
Rev 1.400
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s

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BU2520DF Summary of contents

Page 1

... 1.0 A Csat B(end) PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2520DF TYP. MAX. UNIT - 1500 V - 800 5 2.2 V 0.35 0.5 s ...

Page 2

... CONDITIONS MHz 6 650 H; C Csat 1 5 B(end) B (-dI / Product specification BU2520DF MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2.0 mA 100 - 300 mA 7.5 13.5 ...

Page 3

... IBM Fig.5. Typical base-emitter saturation voltage. + 150 v nominal 1.0 adjust for ICsat 0.9 0.8 0.7 Lc 0.6 0.5 0.4 0.3 Cfb 0.2 0.1 0 0.1 Fig.6. Typical collector-emitter saturation voltage. 3 Product specification BU2520DF hFE 125 parameter V CE VBESAT / 125 C IC/IB sat = parameter I ...

Page 4

... Fig.11. Normalised power dissipation. C Zth / (K/W) 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0. 0.001 1E- 85˚C Fig.12. Transient thermal impedance Product specification BU2520DF parameter 85˚ kHz Normalised Power Derating with heatsink compound 100 120 140 Ths / C ...

Page 5

... Fig.13. Forward bias safe operating area & f single pulse; parameter t CDC Second-breakdown limits independant of temperature. Mounted with heatsink compound. September 1997 BU2520AF 100 1000 VCE / ˚ Product specification BU2520DF Rev 1.400 ...

Page 6

... Fig.14. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU2520DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.400 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2520DF Rev 1.400 ...

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