BU2520DF Philips Semiconductors, BU2520DF Datasheet
BU2520DF
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BU2520DF Summary of contents
Page 1
... 1.0 A Csat B(end) PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2520DF TYP. MAX. UNIT - 1500 V - 800 5 2.2 V 0.35 0.5 s ...
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... CONDITIONS MHz 6 650 H; C Csat 1 5 B(end) B (-dI / Product specification BU2520DF MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2.0 mA 100 - 300 mA 7.5 13.5 ...
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... IBM Fig.5. Typical base-emitter saturation voltage. + 150 v nominal 1.0 adjust for ICsat 0.9 0.8 0.7 Lc 0.6 0.5 0.4 0.3 Cfb 0.2 0.1 0 0.1 Fig.6. Typical collector-emitter saturation voltage. 3 Product specification BU2520DF hFE 125 parameter V CE VBESAT / 125 C IC/IB sat = parameter I ...
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... Fig.11. Normalised power dissipation. C Zth / (K/W) 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0. 0.001 1E- 85˚C Fig.12. Transient thermal impedance Product specification BU2520DF parameter 85˚ kHz Normalised Power Derating with heatsink compound 100 120 140 Ths / C ...
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... Fig.13. Forward bias safe operating area & f single pulse; parameter t CDC Second-breakdown limits independant of temperature. Mounted with heatsink compound. September 1997 BU2520AF 100 1000 VCE / ˚ Product specification BU2520DF Rev 1.400 ...
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... Fig.14. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU2520DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.400 o 45 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2520DF Rev 1.400 ...