DS1225Y-150IND Maxim Integrated Products, DS1225Y-150IND Datasheet

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DS1225Y-150IND

Manufacturer Part Number
DS1225Y-150IND
Description
Manufacturer
Maxim Integrated Products
Datasheet

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Part Number:
DS1225Y-150IND
Manufacturer:
DALLAS
Quantity:
624
Part Number:
DS1225Y-150IND+
Manufacturer:
DALLAS
Quantity:
104
FEATURES
DESCRIPTION
The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for micro-
processor interfacing.
www.maxim-ic.com
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 150 ns
Full ±10% operating range
Optional industrial temperature range of
-40°C to +85°C, designated IND
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
1 of 8
PIN ASSIGNMENT
PIN DESCRIPTION
A0-A12
DQ0-DQ7
V
GND
CE
WE
OE
CC
24-Pin ENCAPSULATED PACKAGE
GND
DQ0
DQ1
DQ2
A12
A7
A6
A5
A4
A3
A2
A1
A0
NC
64k Nonvolatile SRAM
720-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DS1225Y
121907

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DS1225Y-150IND Summary of contents

Page 1

... The NV SRAM can be used in place of existing SRAMs directly conforming to the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for micro- processor interfacing ...

Page 2

... OE WRITE MODE The DS1225Y executes a write cycle whenever the WE and CE signals are active (low) after address inputs are stable. The later-occurring falling edge will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge All address inputs must be kept valid throughout the write cycle ...

Page 3

... See Note 10 SYMBOL MIN TYP CCS1 1 3 CCS2 1 CCO1 I CCO1 V 4. DS1225Y (T : See Note 10) A MAX UNITS NOTES 5.5 V VCC V +0 ± 10%) CC MAX UNITS NOTES μA +1.0 μA +1 ...

Page 4

... CC DS1225Y-200 UNITS MAX MIN MAX 200 ns 170 200 ns 80 100 ns 170 200 200 ns 150 MAX UNITS DS1225Y NOTES 25°C) A NOTES ...

Page 5

... READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTE AND 12 WRITE CYCLE 2 SEE NOTE AND DS1225Y ...

Page 6

... PD t 100 REC SYMBOL MIN during a write cycle, the output buffers remain in a high impedance IH is measured from the latter MAX UNITS NOTES μs 11 μs μ 25°C) A MAX UNITS NOTES years 9 DS1225Y ...

Page 7

... All voltages are referenced to ground. ORDERING INFORMATION TEMPERATURE PART NUMBER RANGE DS1225Y-150 0°C to +70°C DS1225Y-150+ 0°C to +70°C DS1225Y-150IND -40°C to +85°C DS1225Y-150IND+ -40°C to +85°C DS1225Y-170 0°C to +70°C DS1225Y-170+ 0°C to +70°C DS1225Y-200 0°C to +70°C DS1225Y-200+ 0°C to +70°C DS1225Y-200IND -40° ...

Page 8

... REVISION HISTORY REVISION DATE Added package information table. 121907 Removed the DIP module package drawing and dimension table. DESCRIPTION DS1225Y PAGES CHANGED 7 ...

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