HFA04TB60 Vishay Semiconductors, HFA04TB60 Datasheet

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HFA04TB60

Manufacturer Part Number
HFA04TB60
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Document Number: 93032
Revision: 30-Jul-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
V
F
T
at 4 A at 25 °C
J
t
dI
rr
(maximum)
(typical)
(rec)M
I
F(AV)
Q
V
R
rr
/dt
Cathode
TO-220AC
1
cathode
Base
Ultrafast, Soft Recovery Diode, 4 A
4
2
Anode
3
For technical questions, contact: diodes-tech@vishay.com
280 A/µs
150 °C
600 V
40 nC
17 ns
1.8 V
4 A
SYMBOL
HEXFRED
T
J
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
T
T
T
TEST CONDITIONS
C
C
C
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA04TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 4 A continuous current, the HFA04TB60
is especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA04TB60 is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
= 100 °C
= 25 °C
= 100 °C
®
RRM
rr
®
Vishay High Power Products
product line features extremely low values of
- 55 to + 150
VALUES
RRM
600
25
16
25
10
4
) and does not exhibit any
b
portion of recovery. The
HFA04TB60
www.vishay.com
UNITS
°C
W
V
A
1

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HFA04TB60 Summary of contents

Page 1

... With basic ratings of 600 V and 4 A continuous current, the HFA04TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, ...

Page 2

... See fig 300 See fig 4.0 8.0 - 8.0 MIN. TYP. MAX 2.9 5.2 - 3.7 6 105 - 280 - - 235 - MIN. TYP. MAX 300 - - 0. (5.0) (10) HFA04TB60 Document Number: 93032 Revision: 30-Jul-08 UNITS V µ UNITS A/µs UNITS °C K/W g oz. kgf · cm (lbf · in) ...

Page 3

... Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.0001 0.001 t - Rectangular Pulse Duration (s) 1 Fig Maximum Thermal Impedance Z For technical questions, contact: diodes-tech@vishay.com HFA04TB60 Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° °C J 0.1 ...

Page 4

... HFA04TB60 Vishay High Power Products 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µ ...

Page 5

... I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com HFA04TB60 Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM rr t ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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