IPB016N06L3G Infineon Technologies AG, IPB016N06L3G Datasheet

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Type (TM) OptiMOS 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • N-channel, logic level • 100% ...

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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 5) ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

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Power dissipation P =f(T ) tot C 300 250 200 150 100 Safe operating area I =f =25 ° parameter limited by ...

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Typ. output characteristics I =f =25 ° parameter 480 4 400 320 240 3.5 V 160 ...

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Drain-source on-state resistance R =f =100 A; V DS(on max 1 0 -60 - Typ. capacitances C =f MHz ...

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Avalanche characteristics =25 Ω parameter: T j(start) 1000 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

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PG-TO-263-7 (D²-Pak 7pin) Rev. 2.1 Packaging: page 8 IPB016N06L3 G 2009-02-10 ...

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... Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, ...