IPD100N04S4-02 Infineon Technologies AG, IPD100N04S4-02 Datasheet
IPD100N04S4-02
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IPD100N04S4-02 Summary of contents
Page 1
... =25°C D,pulse =50A =25°C tot stg - - page 1 IPD100N04S4-02 DS DS(on),max D PG-TO252-3-313 Value =10V 100 2) 100 =10V 400 440 100 ±20 150 -55 ... +175 55/175/ 2.0 m 100 A Unit °C 2010-04-13 ...
Page 2
... =95µA GS(th =40V, V =0V DSS T =25° =18V, V =0V =85° =20V, V =0V GSS =10V, I =100A DS(on page 2 IPD100N04S4-02 Values min. typ. max 1 2.0 3.0 4 100 - 1.7 2.0 2010-04-13 Unit K/W V µ ...
Page 3
... =25° =20V, I =50A /dt =100A/µ 1.0K/W the chip is able to carry 206A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD100N04S4-02 Values min. typ. max. - 7250 9430 = 1630 2120 - =10V ...
Page 4
... Max. transient thermal impedance Z = f(t thJC parameter µ µs -1 100 µ 100 [V] page 4 IPD100N04S4- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] ...
Page 5
... 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 3.5 3 2.5 2 1.5 -55 ° [V] page 5 IPD100N04S4- ° 5 120 I [ 100 -60 - 100 T [° 6 160 ...
Page 6
... Avalanche characteristics parameter: T 100 25 °C 10 25°C 1 0.8 0 1.2 1.2 1.4 1.4 [V] [V] page 6 IPD100N04S4- MHz [ j(start 100 t [µs] AV Ciss Coss Crss °C 100 °C 150 °C 1000 2010-04-13 ...
Page 7
... Q gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th 100 [nC] page 7 IPD100N04S4- -55 - 105 T [° 145 Q gate 2010-04-13 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD100N04S4-02 2010-04-13 ...
Page 9
... Revision History Version Revision 1.0 Rev. 1.0 Date 13.04.2010 page 9 IPD100N04S4-02 Changes Final Data Sheet 2010-04-13 ...