IRF3710S International Rectifier Corp., IRF3710S Datasheet

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IRF3710S

Manufacturer Part Number
IRF3710S
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
l
l
Advanced HEXFET
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
www.irf.com
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
J
STG
D
GS
AR
θJC
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
2
C
C
C
Pak is a surface mount power package capable of accommodating die
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
®
Junction-to-Case
Junction-to-Ambient
Power MOSFETs from International Rectifier utilize
Parameter
Parameter

(PCB Mounted,steady-state)**
‡
ƒ‡
GS
GS

@ 10V
@ 10V
G
2
Pak is
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
-55 to + 175
S
D
Max.
IRF3710S
180
200
± 20
1.3
5.8
57
40
28
20
D
2
IRF3710S
IRF3710L
Pak
®
R
Power MOSFET
V
DS(on)
Max.
0.75
40
DSS
I
D
= 57A
PD - 94201B
= 100V
= 23mΩ
IRF3710L
TO-262
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1

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IRF3710S Summary of contents

Page 1

... Typ. (PCB Mounted,steady-state)** PD - 94201B IRF3710S IRF3710L ® HEXFET Power MOSFET 100V DSS R = 23mΩ DS(on 57A Pak TO-262 IRF3710S IRF3710L Max. Units 180 200 W 1.3 W/°C ± 5.8 V/ns - 175 °C Max. Units – ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 16V 10V 7.0V 6.0V 5.0V 100 4.5V 4.0V BOTTOM 3. 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 10 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 550 15V 440 DRIVER + 330 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ 6TT@H7G` `@6SÃÃ2Ã! GPUÃ8P @ X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ Q6SUÃIVH7@S 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR www.irf.com 9 ...

Page 10

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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