IRF4905S International Rectifier Corp., IRF4905S Datasheet

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IRF4905S

Manufacturer Part Number
IRF4905S
Description
Manufacturer
International Rectifier Corp.
Datasheet

Specifications of IRF4905S

Case
TO-263

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Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for low-
profile applications.
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
AR
D
D
DM
2
AS
AR
J
STG
D
D
GS
Pak is suitable for high current applications because of
JA
@ T
@ T
JC
@T
Advanced Process Technology
Surface Mount (IRF4905S)
Low-profile through-hole (IRF4905L)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
@T
2
C
C
Pak is a surface mount power package capable of
A
C
= 25°C
= 25°C
= 100°C
= 25°C
on-resistance per silicon area.
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
GS
GS
@ -10V
@ -10V
This
G
300 (1.6mm from case )
Typ.
–––
–––
D P a k
HEXFET
2
-55 to + 175
IRF4905S/L
S
D
Max.
-260
± 20
-5.0
200
930
-74
-52
1.3
-38
3.8
20
®
R
T O -2 6 2
Power MOSFET
V
DS(on)
Max.
0.75
40
DSS
I
D
= -74A
PD - 9.1478A
= -55V
= 0.02
Units
Units
W/°C
V/ns
°C/W
mJ
mJ
°C
W
W
A
V
A
8/25/97

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IRF4905S Summary of contents

Page 1

... Advanced Process Technology Surface Mount (IRF4905S) Low-profile through-hole (IRF4905L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...

Page 2

... IRF4905S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Ga te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 1000 100 10 = 25° IRF4905S/L VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT -4 µ LSE 175° 75° 0 ...

Page 4

... IRF4905S/L 7000 6000 5000 4000 3000 2000 1000 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° °C ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit 125 150 175 ° Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRF4905S D.U. -10V Pulse Width µs Duty Factor ...

Page 6

... IRF4905S 20V 0. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 2500 2000 1500 ...

Page 7

... Fig 14. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF4905S *** V =10V ...

Page 8

... IRF4905S Pak Package Outline 10.54 ( .415) 10.29 ( .405) 1.40 (.055 MAX. 2 1.78 (.070) 1.27 (.050 1.40 (.055) 3X 1.14 (.045) 5.08 ( .200 DIM ENS OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982 LLING DIME NSIO N : INCH SINK & LEAD DIMEN SION INCLUDE BURRS. ...

Page 9

... Package Outline TO-262 Outline Part Marking Information TO-262 IRF4905S/L ...

Page 10

... IRF4905S/L Tape & Reel Information 2 D Pak TIO TIO N 33 0.0 0 (14 EIA -418 . LLIN SIO ILLIM ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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