IRF5210S International Rectifier Corp., IRF5210S Datasheet

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IRF5210S

Manufacturer Part Number
IRF5210S
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Absolute Maximum Ratings
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
AR
D
D
DM
AS
AR
J
STG
D
D
GS
JA
@ T
@ T
JC
@T
@T
Advanced Process Technology
Surface Mount (IRF5210S)
Low-profile through-hole (IRF5210L)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
2
C
C
Pak is a surface mount power package capable of
A
C
= 25°C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Parameter
Parameter
2
Pak is suitable
GS
GS
@ -10V
@ -10V
G
300 (1.6mm from case )
Typ.
–––
–––
D P ak
HEXFET
2
-55 to + 175
IRF5210S/L
S
D
Max.
-140
-5.0
200
± 20
780
-40
-29
-21
3.8
1.3
20
®
R
T O -26 2
Power MOSFET
V
DS(on)
Max.
0.75
DSS
40
I
D
= -40A
PD - 91405C
= -100V
= 0.06
Units
Units
W/°C
V/ns
°C/W
mJ
mJ
°C
W
W
A
V
A
5/13/98

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IRF5210S Summary of contents

Page 1

... Advanced Process Technology Surface Mount (IRF5210S) Low-profile through-hole (IRF5210L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...

Page 2

... IRF5210S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 2. Typical Output Characteristics 3 2.5 2.0 J 1.5 1.0 0.5 0 -60 -40 - unc tion T em perature (° Fig 4. Normalized On-Resistance IRF5210S/L -4 .5V 4 0µ ° rain-to-S ource V oltage ( - ...

Page 4

... IRF5210S iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF5210S D.U. µ d(off ...

Page 6

... IRF5210S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform ...

Page 7

... D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple *** V = 5.0V for Logic Level and 3V Drive Devices GS Fig 14. For P-Channel HEXFETS IRF5210S/L Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" ...

Page 8

... IRF5210S Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP. ...

Page 9

... Package Outline TO-262 Outline Part Marking Information TO-262 IRF5210S/L ...

Page 10

... IRF5210S/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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