IRF7205 International Rectifier Corp., IRF7205 Datasheet
IRF7205
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IRF7205 Summary of contents
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... Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient JA HEXFET View @ 10V GS @ 10V GS - 150 Min. ––– 9.1104B IRF7205 ® Power MOSFET -30V DSS 0.070 DS(on -4. Max. Units -4.6 A -3.7 -15 2.5 W 0.020 W/° ...
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... IRF7205 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... IRF7205 ...
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... IRF7205 12 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V GS 10% 90 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7205 D.U.T. -10V µ d(on) r d(off) f ...
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... IRF7205 Q G -10V Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA I G Current Sampling Resistors Fig 12b. Gate Charge Test Circuit - ...
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... Fig 13. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF7205 + *** V =10V ...
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... IRF7205 Package Outline SO8 Outline 0.25 (.010 0.25 (.010 ...
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... GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7205 . . ...